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IRG4PC50U, IRG4PC50UD, IRG4PC50UDPBF

Table of contents:
Info of IRG4PC50U
Info of IRG4PC50UD
Info of IRG4PC50UDPBF

IRG4PC50U, IRG4PC50UD, IRG4PC50UDPBF Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:08+/09+

IRG4PC50U, IRG4PC50UD, IRG4PC50UDPBF Datasheet download

Five Points

Part Number: IRG4PC50UD

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: TO-247

D/C: 08+/09+

Description: IGBT W/DIODE 600V 55A TO247AC

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IRG4PC50U Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Breakdown Voltage	600	V
I_C@ T_C = 25	Continuous Collector Current	55	A
I_C @ T_C = 100	Continuous Collector Current	27
I_CM	Pulsed Collector Current	220
I_LM	Clamped Inductive Load Current	220
V_GE	Gate-to-Emitter Voltage	±20	V
E_ARV	Reverse Voltage Avalanche Energy	20	mJ
P_D @ T_C = 25	Maximum Power Dissipation	200	W
P_D @ T_C = 100	Maximum Power Dissipation	78	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm) from case
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

IRG4PC50U Features

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard
switching, >200 kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and
higher efficiency than Generation 3
• Industry standard TO-247AC package

IRG4PC50UD Parameters

Technical/Catalog Information	IRG4PC50UD
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	55A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 27A
Power - Max	200W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Bag
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRG4PC50UD IRG4PC50UD

IRG4PC50UDPBF Parameters

Technical/Catalog Information	IRG4PC50UDPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	55A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 27A
Power - Max	200W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	Bag
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4PC50UDPBF IRG4PC50UDPBF

IRG4PC50UDPBF Maximum Ratings

Symbol	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_D @ T_C =25	Continuous Drain Current	55	A
I_D @ T_C =100	Continuous Drain Current	27
I_CM	Pulsed Collector Current	220
I_LM	Clamped Inductive Load Current	220
I_F @ T_C =100	Pulsed Drain Current	25
I_FM	Diode Maximum Forward Current	220
I_GE	Gate-to-Emitter Voltage	±20	V
P_D @T_C=25	Maximum Power Dissipation	200	W
P_D @T_C=100	Maximum Power Dissipation	78	W
T_{J,T_STG}	Operating Junction and Storage Temperature Range	-55 to+150
	Soldering Temperature for 10 seconds	300
	Mounting Torque, 6-32 or M3 Screw	10lb.in (1.1N.m)

	Parameter	Typ	Max.	Units
R_JC R_JC R_CS R_JA Wt	Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight	- - 0.24 - 6(0.21)	0.64 0.83 - 40 -	/W g(oz)

IRG4PC50UDPBF Features

·UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
·Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
·IGBT co-packaged with HEXFRED^TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
·Industry standard TO-247AC package
·Lead-Free

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