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IRG4PH40K, IRG4PH40KD, IRG4PH40S

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Info of IRG4PH40K
Info of IRG4PH40KD
Info of IRG4PH40S

IRG4PH40K, IRG4PH40KD, IRG4PH40S Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:IOR D/C:04+

IRG4PH40K, IRG4PH40KD, IRG4PH40S Datasheet download

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Part Number: IRG4PH40KD

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: IOR

D/C: 04+

Description: IGBT W/DIODE 1200V 30A TO-247AC

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IRG4PH40K Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	1200	V
I_C@ T_C = 25	Continuous Collector Current	30	A
I_C @ T_C = 100	Continuous Collector Current	15
I_CM	Pulsed Collector Current	60
I_LM	Clamped Inductive Load Current	60
t_sc	Short Circuit Withstand Time	10	µs
V_GE	Gate-to-Emitter Voltage	±20	V
E_ARV	Reverse Voltage Avalanche Energy	180	mJ
P_D @ T_C = 25	Maximum Power Dissipation	160	W
P_D @ T_C = 100	Maximum Power Dissipation	65	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm) from case
	Mounting Torque, 6-32 or M3 Screw.	10 lbf•in (1.1 N•m)

IRG4PH40K Features

• High short circuit rating optimized for motor control, t_sc=10µs, V_CC = 720V ,
T_J = 125, V_GE = 15V
• Combines low conduction losses with high switching speed
• Latest generation design provides tighter parameter distribution and
higher efficiency than previous generations

IRG4PH40KD Parameters

Technical/Catalog Information	IRG4PH40KD
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	30A
Vce(on) (Max) @ Vge, Ic	3.4V @ 15V, 15A
Power - Max	160W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
Packaging	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRG4PH40KD IRG4PH40KD

IRG4PH40KD Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	1200	V
I_C@ T_C = 25	Continuous Collector Current	30	A
I_C @ T_C = 100	Continuous Collector Current	15
I_CM	Pulsed Collector Current	60
I_LM	Clamped Inductive Load Current	60
I_F @ T_C = 100	Diode Continuous Forward Current	8.0
I_FM	Diode Maximum Forward Current	130
t_SC	Short Circuit Withstand Time	10	µs
V_GE	Gate-to-Emitter Voltage	±20	V
P_D @ T_C = 25	Maximum Power Dissipation	200	W
P_D @ T_C = 100	Maximum Power Dissipation	78	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm) from case
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

IRG4PH40KD Features

• High short circuit rating optimized for motor control, t_sc =10µs, V_CC = 720V ,
T_J = 125, V_GE = 15V
• Combines low conduction losses with high switching speed
• Tighter parameter distribution and higher efficiency than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery
antiparallel diodes

IRG4PH40S Maximum Ratings

	Parameter	Max.	Units
VCES	Collector-to-Emitter Breakdown Voltage	1200	V
IC @ T_C = 25°C	Continuous Collector Current	33	A
I_C @ T_C = 100°C	Continuous Collector Current	20
I_CM	Pulsed Collector Current	66
I_LM	Clamped Inductive Load Current	66
V_GE	Gate-to-Emitter Voltage	±20	V
E_ARV	Reverse Voltage Avalanche Energy	250	mJ
P_D @ TC = 25°C	Maximum Power Dissipation	160	W
P_D @ TC = 100°C	Maximum Power Dissipation	65	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm) from case)	°C
	Mounting torque, 6-32 or M3 screw	10 lbf•in (1.1N•m)

Thermal Resistance

	Parameter	Typ.	Max.	Units
R_JC	Junction-to-Case	-	0.77	°C/W
R_CS	Case-to-Sink, Flat, Greased Surface	0.24	-
R_JA	Junction-to-Ambient (Typical Socket Mount)	-	40
Wt	Weight	6 (0.21)	-	g(oz)

IRG4PH40S Features

• Extremely low on state voltage drop 1.0V typical at 5.0A
• Extremely low V_CE(on) variation from lot to lot
• Industry standard TO-247AC package

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