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IRGC49B120KB, IRGCC20UE, IRGCC30FE

Table of contents:
Info of IRGC49B120KB
Info of IRGCC20UE
Info of IRGCC30FE

IRGC49B120KB, IRGCC20UE, IRGCC30FE Selling Leads, Datasheet

MFG:IR Package Cooled:N/A D/C:N/A

IRGC49B120KB, IRGCC20UE, IRGCC30FE Picture

IRGC49B120KB, IRGCC20UE, IRGCC30FE Datasheet download

Five Points

Part Number: IRGC49B120KB

MFG: IR

Package Cooled: N/A

D/C: N/A

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IRGC49B120KB Features

• GEN5 Non Punch Through (NPT) Technology
• Low V_CE(on)
• 10s Short Circuit Capability
• Square RBSOA
• Positive V_CE(on) Temperature Coefficient

IRGCC20UE General Description

The IRGCC20UE has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 3.1V Max.,the test conditions is IC=6.5A,TJ=25,VGE=15V.When parameter is V(BR)CES,the description is colletor-to-emitter breakdown voltage,the guaranteed (Min/Max) is 600V Min.,the test conditions is TJ=25,ICES =250A,VGE=0V.When parameter is VGE(th),the description is gate threshold voltage,the guaranteed (Min/Max) is 3.0V Min.,5.5V Max.,the test conditions is VGE=VCE,TJ=25,IC =250A.When parameter is ICES,the description is zero gate voltage collector current,the guaranteed (Min/Max) is 250A Max.,the test conditions is TJ=25,VCE=600V.When parameter is IGES,the description is gate-to-emitter leakage current,the guaranteed (Min/Max) is ±500A Max.,the test conditions is TJ=25,VGE=+/-20V.

The IRGCC20UE has some mechanical data.The nominal back metal composition,thickness is Cr-NiV-Ag (1 kA-2kA-2.5kA ).The nominal front metal composition,thickness is 99% Al, 1% Si (3 microns).The chip dimensions is 0.107" x 0.134" .The wafer diameter is 125mm, with std. < 100 > flat.The wafer thickness,Tolerance is .015" + / -.003".The relevant die mechanical dwg. number is 01-5198.The minimum street width is 100 microns.The reject ink dot size is 0.25 mm diameter minimum.The ink dot location is consistent throughout same wafer lot.The recommended storage environment is storage in original container, in dessicated nitrogen, with no contamination.

IRGCC20UE Maximum Ratings

IRGCC20UE Features

IRGCC30FE General Description

The IRGCC30FE has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 2.7V Max.,the test conditions is IC=17A,TJ=25,VGE=15V.When parameter is V(BR)CES,the description is colletor-to-emitter breakdown voltage,the guaranteed (Min/Max) is 600V Min.,the test conditions is TJ=25,ICES =250A,VGE=0V.When parameter is VGE(th),the description is gate threshold voltage,the guaranteed (Min/Max) is 3.0V Min.,5.5V Max.,the test conditions is VGE=VCE,TJ=25,IC =250A.When parameter is ICES,the description is zero gate voltage collector current,the guaranteed (Min/Max) is 250A Max.,the test conditions is TJ=25,VCE=600V.When parameter is IGES,the description is gate-to-emitter leakage current,the guaranteed (Min/Max) is ±500A Max.,the test conditions is TJ=25,VGE=+/-20V.

The IRGCC30FE has some mechanical data.The nominal back metal composition,thickness is Cr-NiV-Ag (1 kA-2kA-2.5kA ).The nominal front metal composition,thickness is 99% Al, 1% Si (3 microns).The chip dimensions is 0.133" x 0.176" .The wafer diameter is 125mm, with std. < 100 > flat.The wafer thickness,Tolerance is .015" + / -.003".The relevant die mechanical dwg. number is 01-5120.The minimum street width is 100 microns.The reject ink dot size is 0.25 mm diameter minimum.The ink dot location is consistent throughout same wafer lot.The recommended storage environment is storage in original container, in dessicated nitrogen, with no contamination.

IRGCC30FE Maximum Ratings

IRGCC30FE Features

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