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IRGMC40F, IRGMC40U, IRGMC50F

Table of contents:
Info of IRGMC40F
Info of IRGMC40U
Info of IRGMC50F

IRGMC40F, IRGMC40U, IRGMC50F Selling Leads, Datasheet

MFG:IR Package Cooled:TO-254AA D/C:05+

IRGMC40F, IRGMC40U, IRGMC50F Datasheet download

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Part Number: IRGMC40F

MFG: IR

Package Cooled: TO-254AA

D/C: 05+

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IRGMC40F General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.They provide substantial benefits to a host of high-voltage, high-current applications.

The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (f_Ic/2, or the "half-current frequency "),as well as an indication of the current handling capability of the device.

IRGMC40F Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C@ T_C= 25°C	Continuous Collector Current	35*	A
I_C@ T_C = 100°C	Continuous Collector Current	20
I_CM	Pulsed Collector Current	152
I_LM	Clamped Inductive Load Current	152
V_GE	Gate-to-Emitter Voltage	±20	V
P_D @ T_C = 25°C	Maximum Power Dissipation	125	W
P_D @ T_C = 100°C	Maximum Power Dissipation	50	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Lead Temperature	300 (0.063 in. (1.6mm) from case)	°C
	Weight	9.3 (typical)

*Current is limited by pin diameter
Thermal Resistance

	Parameter	Typ.	Max.	Units
R_JC	Junction-to-Case	-	1.0	°C/W
R_CS	Case-to-Sink	0.21	-
R_JA	Junction-to-Ambient	-	48

IRGMC40F Features

• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed operation 3 kHz - 8 kHz
• Switching-loss rating includes all "tail" losses

IRGMC40U General Description

The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (f_Ic/2, or the "half-current frequency "),as well as an indication of the current handling capability of the device.

IRGMC40U Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C@ T_C= 25°C	Continuous Collector Current	35*	A
I_C@ T_C= 100°C	Continuous Collector Current	20
I_CM	Pulsed Collector Current	152
I_LM	Clamped Inductive Load Current	152
V_GE	Gate-to-Emitter Voltage	±20	V
P_D @ T_C = 25°C	Maximum Power Dissipation	125	W
P_D @ T_C = 100°C	Maximum Power Dissipation	50	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Lead Temperature	300 (0.063 in. (1.6mm) from case)	°C
	Weight	9.3 (typical)	g

*Current is limited by pin diameter
Thermal Resistance

	Parameter	Typ.	Max.	Units
R_JC	Junction-to-Case	-	1.0	°C/W
R_CS	Case-to-Sink	0.21	-
R_JA	Junction-to-Ambient	-	48

IRGMC40U Features

• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed operation >10 kHz
• Switching-loss rating includes all "tail" losses

IRGMC50F General Description

IRGMC50F Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C @ T_C= 25°C	Continuous Collector Current	35*	A
I_C@ T_C = 100°C	Continuous Collector Current	30
I_CM	Pulsed Collector Current	210
I_LM	Clamped Inductive Load Current	210
V_GE	Gate-to-Emitter Voltage	±20	V
P_D @ T_C = 25°C	Maximum Power Dissipation	150	W
P_D @ T_C = 100°C	Maximum Power Dissipation	60	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Lead Temperature	300 (0.063 in. (1.6mm) from case)	°C
	Weight	9.3 (typical)	g

*Current is limited by pin diameter

IRGMC50F Features

• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed operation 3 kHz - 8 kHz
• Switching-loss rating includes all "tail" losses

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