MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:06+
IRGP4065, IRGP4065D, IRGP4065DPBF Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-3P
D/C: 06+
Description: IGBT PDP N-CH 300V 70A TO-247AC
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PDF/DataSheet Download
Datasheet: IRG4BAC50S
File Size: 138592 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRG4BAC50S
File Size: 138592 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRG4BAC50S
File Size: 138592 KB
Manufacturer:
Download : Click here to Download
| Technical/Catalog Information | IRGP4065DPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 300V |
| Current - Collector (Ic) (Max) | 70A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 70A |
| Power - Max | 160W |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 (TO-247AC, Straight Leads) |
| Packaging | Bag |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGP4065DPBF IRGP4065DPBF |
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
|
Parameter |
Max. |
Units | |
|
VGE |
Gate-to-Emitter Voltage |
±30 |
V |
|
IC@ TC = 25 |
Continuous Collector Current VGE @ 15V |
70 |
A |
|
IC@ TC = 100 |
Continuous Collector, VGE @15V |
40 | |
|
IRP @ TC = 25 |
Repetitive Peak Current |
205 | |
|
PD @ TC = 25 |
Power Dissipation |
160 |
W |
|
PD @ TC = 100 |
Linear Derating Factor |
63 | |
| Linear Derating Factor |
1.3 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
|
TJ TSTG |
Operating Junction Storage Temperature Range |
-40 to + 150 |
|
| Soldering Temperature, for 10 seconds |
300 | ||
| Mounting torque, 6-32 or M3 screw |
10 lbf.in (1.1N.m) |
N |
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