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IRGP450U, IRGP450UD2, IRGP50B60PD

Table of contents:
Info of IRGP450U
Info of IRGP450UD2
Info of IRGP50B60PD

IRGP450U, IRGP450UD2, IRGP50B60PD Selling Leads, Datasheet

MFG:IR Package Cooled:TO-247 D/C:O1

IRGP450U, IRGP450UD2, IRGP50B60PD Picture

IRGP450U, IRGP450UD2, IRGP50B60PD Datasheet download

Five Points

Part Number: IRGP450U

MFG: IR

Package Cooled: TO-247

D/C: O1

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IRGP450U General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.

IRGP450U Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	500	V
I_C@ T_C = 25°C	Continuous Collector Current	59	A
I_C @ T_C = 100°C	Continuous Collector Current	33
I_CM	Pulsed Collector Current	120
I_LM	Clamped Inductive Load Current	120
V_GE	Gate-to-Emitter Voltage	±20	V
E_ARV	Reverse Voltage Avalanche Energy	20	mJ
P_D @ T_C = 25°C	Maximum Power Dissipation	200	W
P_D @ T_C = 100°C	Maximum Power Dissipation	78	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)	°C
	Mounting torque, 6-32 or M3 screw.	10 lbf`in (1.1N`m)

IRGP450U Features

• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve

IRGP450UD2 General Description

Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.

IRGP450UD2 Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	500	V
I_C @ T_C = 25°C	Continuous Collector Current	59	A
I_C@ T_C = 100°C	Continuous Collector Current	33
I_CM	Pulsed Collector Current	120
I_LM	Clamped Inductive Load Current	120
I_F @ T_C= 100°C	Diode Continuous Forward Current	29
I_FM	Diode Maximum Forward Current	120
V_GE	Gate-to-Emitter Voltage	± 20	V
P_D @T_C = 25°C	Maximum Power Dissipation	200	W
P_D@ T_C = 100°C	Maximum Power Dissipation	78	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)	°C
	Mounting Torque, 6-32 or M3 Screw.	10 lbf•in (1.1 N•m)

IRGP450UD2 Features

• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)

IRGP50B60PD Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C @ TC = 25°C	Continuous Collector Current	75	A
I_C @ TC = 100°C	Continuous Collector Current	42	A
ICM	Pulse Collector Current (Ref. Fig. C.T.4)	150	A
ILM	Clamped Inductive Load Current	150	A
I_F @ TC = 25°C	Diode Continous Forward Current	50	A
I_F @ TC = 100°C	Diode Continous Forward Current	25	A
IFRM	Maximum Repetitive Forward Current	100	A
VGE	Gate-to-Emitter Voltage	±20	V
P_D @ TC = 25°C	Maximum Power Dissipation	370	W
P_D @ TC = 100°C	Maximum Power Dissipation	150	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to +150
	Soldering Temperature for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting Torque, 6-32 or M3 Screw	10 lbf`in (1.1 N`m)

IRGP50B60PD Features

• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability

IRGP50B60PD Typical Application

• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies

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