IRGPC20K, IRGPC20KD2, IRGPC20M Selling Leads, Datasheet
MFG:IR Package Cooled:09+ D/C:TO-247
IRGPC20K, IRGPC20KD2, IRGPC20M Datasheet download
Part Number: IRGPC20K
MFG: IR
Package Cooled: 09+
D/C: TO-247
IRGPC20K, IRGPC20KD2, IRGPC20M
- Table of contents:
Info of IRGPC20K
Info of IRGPC20KD2
Info of IRGPC20M
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About IRGPC20K
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Datasheet: IRGPC20K
File Size: 111258 KB
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About IRGPC20KD2
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Datasheet: IRGPC20KD2
File Size: 150461 KB
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About IRGPC20M
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Datasheet: IRGPC20M
File Size: 109504 KB
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IRGPC20K General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors,while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
IRGPC20K Maximum Ratings
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
10 |
A |
| IC @ TC = 100°C | Continuous Collector Current |
6.0 | |
| ICM | Pulsed Collector Current |
20 | |
| ILM | Clamped Inductive Load Current |
20 | |
| tsc | Short Circuit Withstand Time |
10 |
s |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| EARV | Reverse Voltage Avalanche Energy |
5.0 |
mJ |
| PD @ TC = 25°C | Maximum Power Dissipation |
60 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
24 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
IRGPC20K Features
• Short circuit rated - 10s @ 125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
IRGPC20KD2 General Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
IRGPC20KD2 Maximum Ratings
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
10 |
A |
| IC @ TC = 100°C | Continuous Collector Current |
6.0 | |
| ICM | Pulsed Collector Current |
20 | |
| ILM | Clamped Inductive Load Current |
20 | |
| tsc | Short Circuit Withstand Time |
10 |
s |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| PD @ TC = 25°C | Maximum Power Dissipation |
60 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
24 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
IRGPC20KD2 Features
• Short circuit rated -10s @125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
IRGPC20M General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
IRGPC20M Maximum Ratings
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
13 |
A |
| IC @ TC = 100°C | Continuous Collector Current |
8.0 | |
| ICM | Pulsed Collector Current |
26 | |
| ILM | Clamped Inductive Load Current |
26 | |
| tsc | Short Circuit Withstand Time |
10 |
s |
| VGE | Gate-to-Emitter Voltage |
±20 |
V |
| EARV | Reverse Voltage Avalanche Energy |
5.0 |
mJ |
| PD @ TC = 25°C | Maximum Power Dissipation |
60 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
24 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C
|
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
IRGPC20M Features
• Short circuit rated - 10s @ 125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
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