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IRGPC20MD2, IRGPC20U, IRGPC30F

Table of contents:
Info of IRGPC20MD2
Info of IRGPC20U
Info of IRGPC30F

IRGPC20MD2, IRGPC20U, IRGPC30F Selling Leads, Datasheet

MFG:IR Package Cooled:IOR D/C:04+

IRGPC20MD2, IRGPC20U, IRGPC30F Datasheet download

Five Points

Part Number: IRGPC20MD2

MFG: IR

Package Cooled: IOR

D/C: 04+

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IRGPC20MD2 General Description

Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.

These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

IRGPC20MD2 Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C @ T_C = 25°C	Continuous Collector Current	13	A
I_C@ T_C = 100°C	Continuous Collector Current	8.0
I_CM	Pulsed Collector Current	26
I_LM	Clamped Inductive Load Current	26
I_F @ T_C= 100°C	Diode Continuous Forward Current	7.0
I_FM	Diode Maximum Forward Current	60
t_sc	Short Circuit Withstand Time	10	µs
V_GE	Gate-to-Emitter Voltage	± 20	V
P_D @T_C = 25°C	Maximum Power Dissipation	60	W
P_D@ T_C = 100°C	Maximum Power Dissipation	24	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)	°C
	Mounting Torque, 6-32 or M3 Screw.	10 lbf•in (1.1 N•m)

IRGPC20MD2 Features

• Short circuit rated -10µs @125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

IRGPC20U General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors,while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.

IRGPC20U Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C @ T_C = 25°C	Continuous Collector Current	13	A
I_C @ T_C= 100°C	Continuous Collector Current	6.5
I_CM	Pulsed Collector Current	52
I_LM	Clamped Inductive Load Current	52
V_GE	Gate-to-Emitter Voltage	±20	V
E_ARV	Reverse Voltage Avalanche Energy	5.0	mJ
P_D @ T_C = 25°C	Maximum Power Dissipation	60	W
P_D@ T_C = 100°C	Maximum Power Dissipation	24	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)	°C
	Mounting torque, 6-32 or M3 screw.	10 lbf`in (1.1N`m)

IRGPC20U Features

• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve

IRGPC30F General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.

IRGPC30F Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C @ T_C = 25°C	Continuous Collector Current	31	A
I_C @ T_C = 100°C	Continuous Collector Current	17
I_CM	Pulsed Collector Current	120
I_LM	Clamped Inductive Load Current	120
V_GE	Gate-to-Emitter Voltage	±20	V
E_ARV	Reverse Voltage Avalanche Energy	10	mJ
P_D @ T_C = 25°C	Maximum Power Dissipation	100	W
P_D @ T_C = 100°C	Maximum Power Dissipation	42	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)	°C
	Mounting torque, 6-32 or M3 screw.	10 lbf`in (1.1N`m)

IRGPC30F Features

• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

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