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IRGPC30M, IRGPC30MD2, IRGPC30S

Table of contents:
Info of IRGPC30M
Info of IRGPC30MD2
Info of IRGPC30S

IRGPC30M, IRGPC30MD2, IRGPC30S Selling Leads, Datasheet

MFG:IR Package Cooled:N/A D/C:2010+

IRGPC30M, IRGPC30MD2, IRGPC30S Datasheet download

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Part Number: IRGPC30M

MFG: IR

Package Cooled: N/A

D/C: 2010+

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IRGPC30M General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.

These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

IRGPC30M Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C @ T_C = 25°C	Continuous Collector Current	26	A
I_C @ T_C = 100°C	Continuous Collector Current	16
I_CM	Pulsed Collector Current	52
I_LM	Clamped Inductive Load Current	52
t_sc	Short Circuit Withstand Time	10	s
V_GE	Gate-to-Emitter Voltage	±20	V
E_ARV	Reverse Voltage Avalanche Energy	10	mJ
P_D @ T_C= 25°C	Maximum Power Dissipation	100	W
P_D @ T_C= 100°C	Maximum Power Dissipation	42	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)	°C
	Mounting torque, 6-32 or M3 screw.	10 lbf`in (1.1N`m)

IRGPC30M Features

• Short circuit rated - 10s @ 125°C, V_GE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

IRGPC30MD2 General Description

Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.

These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

IRGPC30MD2 Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C @ T_C = 25°C	Continuous Collector Current	26	A
I_C@ T_C = 100°C	Continuous Collector Current	16
I_CM	Pulsed Collector Current	52
I_LM	Clamped Inductive Load Current	52
I_F @ T_C= 100°C	Diode Continuous Forward Current	12
I_FM	Diode Maximum Forward Current	52
tsc	Short Circuit Withstand Time	10	µs
V_GE	Gate-to-Emitter Voltage	± 20	V
P_D @T_C = 25°C	Maximum Power Dissipation	100	W
P_D@ T_C = 100°C	Maximum Power Dissipation	42	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)	°C
	Mounting Torque, 6-32 or M3 Screw.	10 lbf•in (1.1 N•m)

IRGPC30MD2 Features

• Short circuit rated -10µs @125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

IRGPC30S General Description

IRGPC30S Maximum Ratings

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C @ T_C = 25°C	Continuous Collector Current	34	A
I_C @ T_C = 100°C	Continuous Collector Current	18
I_CM	Pulsed Collector Current	68
I_LM	Clamped Inductive Load Current	68
V_GE	Gate-to-Emitter Voltage	±20	V
E_ARV	Reverse Voltage Avalanche Energy	10	mJ
P_D @ T_C= 25°C	Maximum Power Dissipation	100	W
P_D @ T_C= 100°C	Maximum Power Dissipation	42	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)	°C
	Mounting torque, 6-32 or M3 screw.	10 lbf`in (1.1N`m)

IRGPC30S Features

• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve

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