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IRGPC40KD2, IRGPC40M, IRGPC40MD2

IRGPC40KD2, IRGPC40M, IRGPC40MD2 Selling Leads, Datasheet

MFG:IR  Package Cooled:IOR  D/C:TO-247

IRGPC40KD2, IRGPC40M, IRGPC40MD2 Picture

IRGPC40KD2, IRGPC40M, IRGPC40MD2 Datasheet download

Five Points

Part Number: IRGPC40KD2

 

MFG: IR

Package Cooled: IOR

D/C: TO-247

 

 

 
 
 
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About IRGPC40KD2

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Datasheet: IRGPC40KD2

File Size: 150829 KB

Manufacturer:

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About IRGPC40M

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Datasheet: IRGPC40M

File Size: 42532 KB

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Datasheet: IRGPC40MD2

File Size: 87575 KB

Manufacturer: IRF [International Rectifier]

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IRGPC40KD2 General Description

Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.

These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

IRGPC40KD2 Maximum Ratings

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C Continuous Collector Current
42
A
IC @ TC = 100°C Continuous Collector Current
25
ICM Pulsed Collector Current
84
ILM Clamped Inductive Load Current
84
IF @ TC = 100°C Diode Maximum Forward Current
15
IFM Diode Maximum Forward Current
84
tsc Short Circuit Withstand Time
10
s
VGE Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C Maximum Power Dissipation
160
W
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
  Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw.
10 lbf`in (1.1N`m)

IRGPC40KD2 Features

• Short circuit rated -10s @125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve

IRGPC40M General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.

These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

IRGPC40M Maximum Ratings

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C Continuous Collector Current
40
A
IC @ TC = 100°C Continuous Collector Current
24
ICM Pulsed Collector Current
80
ILM Clamped Inductive Load Current
80
tsc Short Circuit Withstand Time
10
s
VGE Gate-to-Emitter Voltage
±20
V
EARV Reverse Voltage Avalanche Energy
15
mJ
PD @ TC = 25°C Maximum Power Dissipation
160
W
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
  Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw.
10 lbf`in (1.1N`m)

IRGPC40M Features

• Short circuit rated - 10s @ 125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz)

IRGPC40MD2 General Description

Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.

These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

IRGPC40MD2 Maximum Ratings

Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C Continuous Collector Current
40
A
IC @ TC = 100°C Continuous Collector Current
24
ICM Pulsed Collector Current
80
ILM Clamped Inductive Load Current
80
IF @ TC = 100°C Diode Continuous Forward Current
15
IFM Diode Maximum Forward Current
80
tsc Short Circuit Withstand Time
10
µs
VGE Gate-to-Emitter Voltage
± 20
V
PD @TC = 25°C Maximum Power Dissipation
160
W
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbf•in (1.1 N•m)

IRGPC40MD2 Features

• Short circuit rated -10µs @125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to 10kHz)

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