IRGPC50S, IRGPC50U, IRGPC50UD2 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-247
IRGPC50S, IRGPC50U, IRGPC50UD2 Datasheet download
Part Number: IRGPC50S
MFG: IR
Package Cooled: TO-247
D/C:
IRGPC50S, IRGPC50U, IRGPC50UD2
- Table of contents:
Info of IRGPC50S
Info of IRGPC50U
Info of IRGPC50UD2
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About IRGPC50S
PDF/DataSheet Download
Datasheet: IRGPC50S
File Size: 110665 KB
Manufacturer:
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About IRGPC50UD2
PDF/DataSheet Download
Datasheet: IRGPC50UD2
File Size: 451631 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRGPC50UD2
PDF/DataSheet Download
Datasheet: IRGPC50UD2
File Size: 451631 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRGPC50S General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- current applications.
IRGPC50S Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IC @ TC = 25°C | Continuous Collector Current | 70 | A |
| IC @ TC = 100°C | Continuous Collector Current | 41 | A |
| ICM | Pulsed Collector Current | 320 | A |
| ILM | Clamped Inductive Load Current | 140 | A |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| EARV | Reverse Voltage Avalanche Energy | 20 | mJ |
| PD @ TC = 25°C | Maximum Power Dissipation | 200 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 78 | W |
| TJ TSTG | Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | °C | |
| Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
IRGPC50S Features
· Switching-loss rating includes all "tail" losses
· Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve
· Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve
IRGPC50UD2 General Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.
IRGPC50UD2 Maximum Ratings
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
55 |
A |
| IC @ TC = 100°C | Continuous Collector Current |
27 | |
| ICM | Pulsed Collector Current |
220 | |
| ILM | Clamped Inductive Load Current |
220 | |
| IF @ TC = 100°C | Diode Continuous Forward Current |
25 | |
| IFM | Diode Maximum Forward Current |
220 | |
| VGE | Gate-to-Emitter Voltage |
± 20 |
V |
| PD @TC = 25°C | Maximum Power Dissipation |
200 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
78 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C |
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw. |
10 lbf•in (1.1 N•m) |
IRGPC50UD2 Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
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