IRGPH20M, IRGPH20S, IRGPH30K Selling Leads, Datasheet
MFG:IR Package Cooled:IOR D/C:04+
IRGPH20M, IRGPH20S, IRGPH30K Datasheet download
Part Number: IRGPH20M
MFG: IR
Package Cooled: IOR
D/C: 04+
IRGPH20M, IRGPH20S, IRGPH30K
- Table of contents:
Info of IRGPH20M
Info of IRGPH20S
Info of IRGPH30K
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About IRGPH20M
PDF/DataSheet Download
Datasheet: IRGPH20M
File Size: 246131 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRGPH20S
PDF/DataSheet Download
Datasheet: IRGPH20S
File Size: 246031 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRG4BAC50S
PDF/DataSheet Download
Datasheet: IRG4BAC50S
File Size: 138592 KB
Manufacturer:
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IRGPH20M General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
IRGPH20M Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 1200 | V |
| IC @ TC = 25°C | Continuous Collector Current | 6.9 | A |
| IC @ TC = 100°C | Continuous Collector Current | 4.5 | A |
| ICM | Pulsed Collector Current | 14 | A |
| ILM | Clamped Inductive Load Current | 14 | A |
| tsc | Short Circuit Withstand Time | 10 | µs |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| EARV | Reverse Voltage Avalanche Energy | 5.0 | mJ |
| PD @ TC = 25°C | Maximum Power Dissipation | 60 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 24 | W |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Operating Junction and Storage Temperature Range |
300 (0.063 in. (1.6mm) from case) | °C | |
| Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |
IRGPH20M Features
• Short circuit rated - 10µs @ 125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
IRGPH20S General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
IRGPH20S Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 1200 | V |
| IC @ TC = 25°C | Continuous Collector Current | 10 | A |
| IC @ TC = 100°C | Continuous Collector Current | 6.6 | A |
| ICM | Pulsed Collector Current | 20 | A |
| ILM | Clamped Inductive Load Current | 20 | A |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| EARV | Reverse Voltage Avalanche Energy | 5.0 | mJ |
| PD @ TC = 25°C | Maximum Power Dissipation | 60 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 24 | W |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Operating Junction and Storage Temperature Range |
300 (0.063 in. (1.6mm) from case) | °C | |
| Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |
IRGPH20S Features
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve
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