IRGPH50KD2, IRGPH50M, IRGPH50MD2 Selling Leads, Datasheet
MFG:IR Package Cooled:IOR D/C:04+
IRGPH50KD2, IRGPH50M, IRGPH50MD2 Datasheet download
Part Number: IRGPH50KD2
MFG: IR
Package Cooled: IOR
D/C: 04+
IRGPH50KD2, IRGPH50M, IRGPH50MD2
- Table of contents:
Info of IRGPH50KD2
Info of IRGPH50M
Info of IRGPH50MD2
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About IRGPH50KD2
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Datasheet: IRGPH50KD2
File Size: 276873 KB
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About IRGPH50M
PDF/DataSheet Download
Datasheet: IRGPH50M
File Size: 261623 KB
Manufacturer: IRF [International Rectifier]
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About IRGPH50MD2
PDF/DataSheet Download
Datasheet: IRGPH50MD2
File Size: 1385328 KB
Manufacturer: IRF [International Rectifier]
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IRGPH50M General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
IRGPH50M Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 1200 | V |
| IC @ TC = 25°C | Continuous Collector Current | 42 | A |
| IC @ TC = 100°C | Continuous Collector Current | 23 | A |
| ICM | Pulsed Collector Current | 84 | A |
| ILM | Clamped Inductive Load Current | 84 | A |
| tsc | Short Circuit Withstand Time | 10 | µs |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| EARV | Reverse Voltage Avalanche Energy | 20 | mJ |
| PD @ TC = 25°C | Maximum Power Dissipation | 200 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 78 | W |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Operating Junction and Storage Temperature Range |
300 (0.063 in. (1.6mm) from case) | °C | |
| Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |
IRGPH50M Features
• Short circuit rated - 10µs @ 125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
IRGPH50MD2 General Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
IRGPH50MD2 Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 1200 | V |
| IC @ TC = 25°C | Continuous Collector Current | 42 | A |
| IC @ TC = 100°C | Continuous Collector Current | 23 | A |
| ICM | Pulsed Collector Current | 84 | A |
| ILM | Clamped Inductive Load Current | 84 | A |
| IF @ TC = 100°C | Diode Continuous Forward Current | 16 | A |
| IFM | Diode Maximum Forward Current | 84 | A |
| tsc | Short Circuit Withstand Time | 10 | µs |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| PD @ TC = 25°C | Maximum Power Dissipation | 200 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 78 | W |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Operating Junction and Storage Temperature Range |
300 (0.063 in. (1.6mm) from case) | °C | |
| Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |
IRGPH50MD2 Features
• Short circuit rated -10µs @125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
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