Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
The IRS2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an Nchannel power MOSFET or IGBT in the high side configuration which operates up to 600 V.
IRS2111PBF Maximum Ratings
Symbol
Definition
Min.
Max.
Units
VB
VS
VHO
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
-0.3
VB - 25
VS - 0.3
625 (Note 1)
VB + 0.3
VB + 0.3
V
VCC
VLO
VIN
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage
-0.3
-0.3
-0.3
25 (Note 1)
VCC + 0.3
VCC + 0.3
dVs/dt
Allowable offset supply voltage transient (Fig. 2)
-
50
V/ns
PD
Package power dissipation @ TA +25
8 Lead PDIP) 8 lead SOIC)
- -
1.0 0.625
W
RthJA
Thermal resistance, junction to ambient
8 Lead PDIP) 8 lead SOIC)
- -
125 200
/W
TJ
TS
TL
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
-
-55
-
150
150
300
Note 1: All supplies are fully tested at 25 V, and an internal 20 V clamp exists for each supply
IRS2111PBF Features
• Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 10 V to 20 V • Undervoltage lockout for both channels • CMOS Schmitt-triggered inputs with pull-down • Matched propagation delay for both channels • Internally set deadtime • High side output in phase with input
IRS2111SPBF Parameters
Technical/Catalog Information
IRS2111SPBF
Vendor
International Rectifier
Category
Integrated Circuits (ICs)
Configuration
Half Bridge
Voltage - Supply
10 V ~ 20 V
Current - Peak
290mA
Delay Time
750ns
Package / Case
8-SOIC (3.9mm Width)
Packaging
Tube
Number of Outputs
2
Input Type
Inverting and Non-Inverting
Number of Configurations
1
Operating Temperature
-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)
600V
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
IRS2111SPBF IRS2111SPBF
IRS2111SPBF General Description
The IRS2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an Nchannel power MOSFET or IGBT in the high side configuration which operates up to 600 V.
IRS2111SPBF Maximum Ratings
Symbol
Definition
Min.
Max.
Units
VB
VS
VHO
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
-0.3
VB - 25
VS - 0.3
625 (Note 1)
VB + 0.3
VB + 0.3
V
VCC
VLO
VIN
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage
-0.3
-0.3
-0.3
25 (Note 1)
VCC + 0.3
VCC + 0.3
dVs/dt
Allowable offset supply voltage transient (Fig. 2)
-
50
V/ns
PD
Package power dissipation @ TA +25
8 Lead PDIP) 8 lead SOIC)
- -
1.0 0.625
W
RthJA
Thermal resistance, junction to ambient
8 Lead PDIP) 8 lead SOIC)
- -
125 200
/W
TJ
TS
TL
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
-
-55
-
150
150
300
Note 1: All supplies are fully tested at 25 V, and an internal 20 V clamp exists for each supply
IRS2111SPBF Features
• Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 10 V to 20 V • Undervoltage lockout for both channels • CMOS Schmitt-triggered inputs with pull-down • Matched propagation delay for both channels • Internally set deadtime • High side output in phase with input