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IRS2004S

Features: • Floating channel designed for bootstrap operation• Fully operational to +200 V• Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range from 10 V to 20 V• Undervoltage lockout• 3.3 V, 5 V, and 15 V input logic compatible• ...

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SeekIC No. : 004378734 Detail

IRS2004S: Features: • Floating channel designed for bootstrap operation• Fully operational to +200 V• Tolerant to negative transient voltage, dV/dt immune• Gate drive supply range from...

IRS2004S Data Sheet

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Part Number:
IRS2004S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Floating channel designed for bootstrap operation
• Fully operational to +200 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout
• 3.3 V, 5 V, and 15 V input logic compatible
• Cross-conduction prevention logic
• Internally set deadtime
• High-side output in phase with input
• Shutdown input turns off both channels
• Matched propagation delay for both channels
• RoHS compliant


Specifications

Symbol Definition Min. Max. Units
VB High-side floating absolute voltage -0.3 225 V
VS High-side floating supply offset voltage VB - 25 VB + 0.3
VHO High-side floating output voltage VS - 0.3 VB + 0.3
VCC Low-side and logic fixed supply voltage -0.3 25
VLO Low-side output voltage -0.3 VCC + 0.3
VIN Logic input voltage (IN & SD ) -0.3 VCC + 0.3
dVs/dt Allowable offset supply voltage transient - 50 V/ns
PD Package power dissipation @ TA +25 8 lead PDIP) - 1.0 W
(8 lead SOIC) - 0.625
RthJA Thermal resistance, junction to ambient (8 lead PDIP) - 125 /W
(8 lead SOIC) - 200
TJ Junction temperature - 150  
TS Storage temperature -55 150
TL Lead temperature (soldering, 10 seconds) - 300



Description

The IRS2004 is a high voltage, high speed power MOSFET and IGBT driver with dependent high- and lowside referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver crossconduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates from 10 V to 200 V.




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