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IRS2153D, IRS2153DPBF, IRS2153DS

Table of contents:
Info of IRS2153D
Info of IRS2153DPBF
Info of IRS2153DS

IRS2153D, IRS2153DPBF, IRS2153DS Selling Leads, Datasheet

MFG:International Rectifier Category:Integrated Circuits (ICs) Package Cooled:SOP8 D/C:08+

IRS2153D, IRS2153DPBF, IRS2153DS Picture

IRS2153D, IRS2153DPBF, IRS2153DS Datasheet download

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Part Number: IRS2153D

Category: Integrated Circuits (ICs)

MFG: International Rectifier

Package Cooled: SOP8

D/C: 08+

Description: IC DVR HALF BRIDGE SELF OSC 8DIP

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IRS2153DPBF Parameters

Technical/Catalog Information	IRS2153DPBF
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Configuration	Half Bridge
Voltage - Supply	10 V ~ 15.4 V
Current - Peak	180mA
Delay Time	-
Package / Case	8-DIP
Packaging	Tube
Number of Outputs	2
Input Type	Self Oscillating
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	600V
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRS2153DPBF IRS2153DPBF

IRS2153DPBF General Description

Description The IRS2153(1)D is based on the popular IR2153 selfoscillating half-bridge gate driver IC using a more advanced silicon platform, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune CMOS technologies enable rugged monolithic construction. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Noise immunity is achieved with low di/dt peak of the gate drivers.

IRS2153DPBF Maximum Ratings

Symbol	Definition	Min.	Max.	Units
V_B V_S V_HO V_LO	High side floating supply voltage High side floating supply offset voltage High side floating output voltage Low side output voltage	-0.3 V_B- 25 V_S 0.3 -0.3	625 V_B + 0.3 V_B + 0.3 V_CC + 0.3	V
I_RT	R_T pin current	-5	5	mA
V_RT V_CT	R_Tpin voltage C_T pin voltage	-0.3 -0.3	V_CC + 0.3 V_CC+ 0.3	V
I_CC I_OMAX	Supply current (Note 1) Maximum allowable current at LO and HO due to external power transistor Miller effect.	--- -500	20 500	mA
dV_S/dt	Allowable offset voltage slew rate	-50	50	V/ns
P_D P_D	Maximum power dissipation @ T_A +25 , 8-Pin DIP Maximum power dissipation @ T_A +25 , 8-Pin SOIC	--- ---	1.0 0.625	W
R_thJA R_thJA	Thermal resistance, junction to ambient, 8-Pin DIP Thermal resistance, junction to ambient, 8-Pin SOIC	--- ---	85 128	/W
T_J T_S T_L	Junction temperature Storage temperature Lead temperature (soldering, 10 seconds)	-55 -55 ---	150 150 300

Note 1: This IC contains a zener clamp structure between the chip V_CC and COM which has a nominal breakdown voltage of 15.4 V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the V_CLAMP specified in the Electrical Characteristics section.

IRS2153DPBF Features

· Integrated 600 V half-bridge gate driver
· C_T, R_T programmable oscillator
· 15.4 V Zener clamp on V_CC
· Micropower startup
· Non-latched shutdown on CT pin (1/6th V_CC)
· Internal bootstrap FET
· Excellent latch immunity on all inputs and outputs
· +/- 50 V/ns dV/dt immunity
· ESD protection on all pins
· 8-lead SOIC or PDIP package
· Internal deadtime

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