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The IRS2308/IRS23084 are high voltage, high speed power MOSFET and IGBT drivers with dependent high-side and low-side referenced output channels.
Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
IRS2308 Maximum Ratings
Symbol
Definition
Min
Max
Units
VB
High side floating supply voltage
-0.3
625
V
VS
High side floating supply voltage (Note2)
VB -20
VB +0.3
VHO
High side floating output voltage
VS -0.3
VB +0.3
VCC
Low side fixed supply voltage (Note2)
-0.3
25
VLO
Low side output voltage
-0.3
Vcc+0.3
VIN
Logic input voltage (HIN & LIN )
VSS -0.3
Vcc+0.3
dVS/dt
Allowable Vs voltage slew rate
---
50
V/ms
Pd
Maximum power dissipation @ TA +25°C
(8 lead PDIP)
---
1.0
W
(8 lead SOIC)
---
1.6
RthJA
Thermal resistance, junction to ambient
(8 lead PDIP)
---
115
/W
(8 lead SOIC)
---
75
TJ
Junction Temperature
---
150
TS
Storage Temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
---
300
IRS2308 Features
• Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 10 V to 20 V • Undervoltage lockout for both channels • 3.3 V, 5 V, and 15 V input logic compatible • Cross-conduction prevention logic • Matched propagation delay for both channels • Outputs in phase with inputs • Logic and power ground +/- 5 V offset. • Internal 540 ns deadtime • Lower di/dt gate driver for better noise immunity • RoHS compliant