MFG:International Rectifier Category:Integrated Circuits (ICs) Package Cooled:SMD16 D/C:2007+
IRS512G, IRS751, IRSF3010 Datasheet download
Category: Integrated Circuits (ICs)
MFG: International Rectifier
Package Cooled: SMD16
D/C: 2007+
Description: IC FET SMART SW 50V 11A TO-220AB
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PDF/DataSheet Download
Datasheet: IRS20124S
File Size: 223917 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRS20124S
File Size: 223917 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRSF3010
File Size: 494945 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRSF3010 |
| Vendor | International Rectifier |
| Category | Integrated Circuits (ICs) |
| Package / Case | TO-220-3 (Straight Leads) |
| Mounting Type | Through Hole |
| Type | High Side/Low Side Driver |
| Voltage - Supply | 1.5 V ~ 10 V |
| On-State Resistance | 70 mOhm |
| Current - Output / Channel | 14A |
| Current - Peak Output | 20A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | -55°C ~ 155°C |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRSF3010 IRSF3010 |
The IRSF3010 is a three terminal monolithic SMART POWER MOSFET with built in short circuit, over-temperature, ESD and over-voltage protections.
The on chip protection circuit latches off the POWER MOSFET in case the drain current exceeds 14A (typical) or the junction temperature exceeds 165°C (typical) and keeps it off until the input is driven low. The drain to source voltage is actively clamped at 55V (typical), prior to the avalanche of POWER MOSFET, thus improving its performance during turn off with inductive loads.
The input current requirements are very low (300uA) which makes the IRSF3010 compatible with most existing designs based on standard POWER MOSFETs.
|
Minimum |
Maximum |
Units |
Test Conditions | ||
| Vds,max | Continuous Drain to Source Voltage |
- |
50 |
V |
|
| Vin,max | Continuous Input Voltage |
-0.3 |
10 | ||
| Ids | Continuous Drain Current |
- |
self limited |
Tc 25 | |
| Pd | Power Dissipation Linear Derating Factor for Tc > 25 |
- |
40 |
W |
|
|
- |
0.33 |
W/ |
|||
| EAS | Unclamped Single Pulse Inductive Energy |
- |
400 |
mJ |
|
| Vesd1 | Electrostatic Discharge Voltage (Human Body Model) |
- |
4000 |
V |
1000pF. 1.5k |
| Vesd2 | Electrostatic Discharge Voltage (Machine Model) |
- |
1000 |
200pF, 0 | |
| TJop | Operating Junction Temperature Range |
-55 |
self limited |
||
| TStg | Storage Temperature Range |
-55 |
175 |
||
| TL | Lead Temperature (Soldering, 10 seconds) |
- |
300 |
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