MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-262 D/C:2009+
ISL9N302AS3, ISL9N302AS3S, ISL9N302AS3ST Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-262
D/C: 2009+
Description: MOSFET N-CH PWM 30V 75A TO-263AB
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PDF/DataSheet Download
Datasheet: ISL9N302AS3ST
File Size: 259330 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: ISL9N302AS3ST
File Size: 259330 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: ISL9N302AS3ST
File Size: 259330 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | ISL9N302AS3 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 2.3 mOhm @ 75A, 10V |
| Input Capacitance (Ciss) @ Vds | 11000pF @ 15V |
| Power - Max | 345W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 300nC @ 10V |
| Package / Case | TO-262AA |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | ISL9N302AS3 ISL9N302AS3 |
| Technical/Catalog Information | ISL9N302AS3ST |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 2.3 mOhm @ 75A, 10V |
| Input Capacitance (Ciss) @ Vds | 11000pF @ 15V |
| Power - Max | 345W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 300nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | ISL9N302AS3ST ISL9N302AS3ST |
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
TA =25°C unless otherwise noted
|
Symbol |
Parameter |
Ratings |
Units |
| VDSS | Drain to Source Voltage |
30 |
V |
| VGS | Gate to Source Voltage |
±20 |
V |
| ID | Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, RJA= 43oC/W) Pulsed |
75 |
A |
|
75 |
A | ||
|
28 |
A | ||
|
Figure 4 |
A | ||
| PD | Power dissipation Derate above 25oC |
345 |
W |
| TJ, TSTG | Operating and Storage Temperature |
-55 to 175 |
oC |
Thermal Characteristics
| RJC | Thermal Resistance Junction to Case TO-263 |
0.43 |
oC/W |
| RJA | Thermal Resistance Junction to Ambient TO-263 |
62 |
oC/W |
| RJA | Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area |
43 |
oC/W |
Package Marking and Ordering Information
| Device Marking | Device | Package | Reel Size | Tape Width | Quantity |
| N302AS | ISL9N302AS3ST | TO-263AB | 330mm | 24mm | 800 units |
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