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ISL9N303AS3ST, ISL9N304AP3, ISL9N304AS3ST

Table of contents:
Info of ISL9N303AS3ST
Info of ISL9N304AP3
Info of ISL9N304AS3ST

ISL9N303AS3ST, ISL9N304AP3, ISL9N304AS3ST Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-263 D/C:TO263

ISL9N303AS3ST, ISL9N304AP3, ISL9N304AS3ST Picture

ISL9N303AS3ST, ISL9N304AP3, ISL9N304AS3ST Datasheet download

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Part Number: ISL9N303AS3ST

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-263

D/C: TO263

Description: MOSFET N-CH PWM 30V 75A TO-263AB

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ISL9N303AS3ST Parameters

Technical/Catalog Information	ISL9N303AS3ST
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	3.2 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	7000pF @ 15V
Power - Max	215W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	172nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	ISL9N303AS3ST ISL9N303AS3ST

ISL9N303AS3ST General Description

This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

ISL9N303AS3ST Maximum Ratings

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	30	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 4.5V) Continuous (TC = 25oC, VGS = 10V, RJA = 43oC/W) Pulsed	75	A
		75	A
		25	A
		Figure 4
PD	Power dissipation Derate above	215 1.43	W W/
TJ, TSTG	Operating and Storage Temperature	-55 to 175

ISL9N303AS3ST Features

•Fast switching
•rDS(ON) = 0.0026 (Typ), VGS = 10V
•rDS(ON) = 0.004 (Typ), VGS = 4.5V
•Qg (Typ) = 61nC, VGS = 5V
•Qgd (Typ) = 17nC
•CISS (Typ) = 7000pF

ISL9N303AS3ST Typical Application

•DC/DC converters

ISL9N304AP3 General Description

This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

ISL9N304AP3 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain to Source Voltage	30	V
V_GS	Gate to Source Voltage	±20	V
I_D	Drain Current Continuous (TC = 25, VGS = 10V) Continuous (TC = 100, VGS = 4.5V) Continuous (TC = 25, VGS = 10V, RJA = 43/W) Pulsed	75	A
		74	A
		20	A
		Figure 4	A
P_D	Power dissipation Derate above 25	145 0.97	W W/
T_J , T_STG	Operating and Storage Temperature	-55 to 175

ISL9N304AP3 Features

* Fast switching
*r_DS(ON) = 0.0036 (Typ), VGS = 10V
*r_DS(ON) = 0.0060 (Typ), VGS = 4.5V
*Q_g (Typ) = 38nC, V_GS = 5V
*Q_gd (Typ) = 13nC
*C_ISS (Typ) = 4075pF

ISL9N304AP3 Typical Application

* DC/DC converters

ISL9N304AS3ST General Description

ISL9N304AS3ST Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain to Source Voltage	30	V
V_GS	Gate to Source Voltage	±20	V
I_D	Drain Current Continuous (TC = 25, VGS = 10V) Continuous (TC = 100, VGS = 4.5V) Continuous (TC = 25, VGS = 10V, RJA = 43/W) Pulsed	75	A
		74	A
		20	A
		Figure 4	A
P_D	Power dissipation Derate above 25	145 0.97	W W/
T_J , T_STG	Operating and Storage Temperature	-55 to 175

ISL9N304AS3ST Features

* Fast switching
*r_DS(ON) = 0.0036 (Typ), VGS = 10V
*r_DS(ON) = 0.0060 (Typ), VGS = 4.5V
*Q_g (Typ) = 38nC, V_GS = 5V
*Q_gd (Typ) = 13nC
*C_ISS (Typ) = 4075pF

ISL9N304AS3ST Typical Application

* DC/DC converters

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