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ISL9N306AP3, ISL9N306AS3ST, ISL9N307AD3ST

Table of contents:
Info of ISL9N306AP3
Info of ISL9N306AS3ST
Info of ISL9N307AD3ST

ISL9N306AP3, ISL9N306AS3ST, ISL9N307AD3ST Selling Leads, Datasheet

Package Cooled:TO-220 D/C:TO-

ISL9N306AP3, ISL9N306AS3ST, ISL9N307AD3ST Picture

ISL9N306AP3, ISL9N306AS3ST, ISL9N307AD3ST Datasheet download

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Part Number: ISL9N306AP3

MFG: --

Package Cooled: TO-220

D/C: TO-

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ISL9N306AP3 General Description

This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allowsoperation to higher switching frequencies.

ISL9N306AP3 Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain to Source Voltage	30	V
V_GS	Gate to Source Voltage	±20	V
I_D	Drain Current Continuous (T_C = 25_^{^oC}, V_GS=10V) Continuous (T_C = 100_^{^oC}, V_GS = 4.5V) Continuous (T_C = 25_^{^oC}, V_GS = V, R_JC = 43oC/W) Pulsed	75	A
		61	A
		18	A
		Figure 4	A
P_D	Power dissipation Derate above 25_^{^oC}	125 0.83	W W/^oC
T_J, T_STG	Operating and Storage Temperature	-55 to 175	_^{^oC}

ISL9N306AP3 Features

• Fast switching
• r_DS(ON) = 0.0052Ω (Typ), V_GS = 10V
• r_DS(ON) = 0.0085Ω (Typ), V_GS = 4.5V
• Qg (Typ) = 30nC, VGS = 5V
• Qgd (Typ) = 11nC
• CISS (Typ) = 3400pF

ISL9N306AP3 Typical Application

• DC/DC converters

ISL9N307AD3ST General Description

This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

ISL9N307AD3ST Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain to Source Voltage	30	V
V_GS	Gate to Source Voltage	±20	V
I_D	Drain Current Continuous (T_C= 25, V_GS = 10V) Continuous (T_C = 100, V_GS= 4.5V) Continuous (T_C = 25, V_GS = 10V,R_JA= 52/W) Pulsed	50	A
		50	A
		15	A
		Figure 4	A
P_D	Power dissipation Derate above 25	100 0.67	W W/

ISL9N307AD3ST Features

•Fast switching
•r_DS(ON) = 0.006Ω (Typ), V_GS= 10V
•r_DS(ON)= 0.010Ω (Typ), V_GS = 4.5V
•Q_g(Typ) = 28nC, VGS= 5V
•Q_gd (Typ) = 10nC
•C_ISS (Typ) = 3000pF

ISL9N307AD3ST Typical Application

•DC/DC converters

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