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N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
ITS4141N Maximum Ratings
Parameter at Tj = 25°C, unless otherwise specified
Symbol
Value
Unit
Supply voltage
Vbb
-0,31)...48
V
Continuous input voltage2)
VIN
-10...Vbb
V
Load current (Short - circuit current, see page 5)
IL
self limited
A
Current through input pin (DC)
IIN
±5
mA
Reverse current through GND-pin3)
-IGND
-0.5
A
Junction temperature
Tj
internal limited
Operating temperature
Ta
-30...+85
Storage temperature
Tstg
-40 ... +105
Power dissipation 4)
Ptot
1.4
W
Inductive load switch-off energy dissipation4)5) single pulse Tj = 125 , IL = 0.5 A
EAS
0.7
J
Load dump protection5) VLoadDump6)= VA + VS RI=2, td=400ms, VIN= low or high, VA=13,5V RL = 47
VLoaddump
83
V
Electrostatic discharge voltage (Human Body Model) according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin All other pins
VESD
±1 ±5
kV
ITS4141N Features
• Short circuit protection • Current limitation • Overload protection • Overvoltage protection (including load dump) • Undervoltage shutdown with autorestart and hysteresis • Switching inductive loads • Clamp of negative voltage at output with inductive loads • CMOS compatible input • Thermal shutdown with restart • ESD - Protection • Loss of GND and loss of Vbb protection • Very low standby current • Reverse battery protection with external resistor • Improved electromagnetic compatibility (EMC)
ITS4141N Typical Application
• All types of resistive, inductive and capacitive loads • µC compatible power switch for 12 V and 24 V DC industrial applications • Replaces electromechanical relays and discrete circuits
ITS4142N Parameters
Technical/Catalog Information
ITS4142N
Vendor
Infineon Technologies
Category
Integrated Circuits (ICs)
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261AA
Mounting Type
Surface Mount
Type
High Side
Voltage - Supply
12 V ~ 45 V
On-State Resistance
150 mOhm
Current - Output / Channel
1.4A
Current - Peak Output
3A
Packaging
Tape & Reel (TR)
Input Type
Non-Inverting
Number of Outputs
1
Operating Temperature
-30°C ~ 85°C
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
ITS4142N ITS4142N
ITS4142N General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
ITS4142N Maximum Ratings
Parameter at Tj = 25°C, unless otherwise specified
Symbol
Value
Unit
Supply voltage
Vbb
-0,31)...48
V
Continuous input voltage2)
VIN
-10...Vbb
V
Load current (Short - circuit current, see page 5)
IL
self limited
A
Current through input pin (DC)
IIN
±5
mA
Reverse current through GND-pin3)
-IGND
-0.5
A
Junction temperature
Tj
internal limited
Operating temperature
Ta
-30...+85
Storage temperature
Tstg
-40 ... +105
Power dissipation 4)
Ptot
1.4
W
Inductive load switch-off energy dissipation4)5) single pulse Tj = 125 , IL = 0.5 A
EAS
0.16
J
Load dump protection5) VLoadDump6)= VA + VS RI=2, td=400ms, VIN= low or high, VA=13,5V RL = 47
VLoaddump
83
V
Electrostatic discharge voltage (Human Body Model) according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin All other pins
VESD
±1 ±5
kV
1defined by Ptot 2At VIN > Vbb, the input current is not allowed to exceed ±5 mA. 3defined by Ptot 4Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. 5not subject to production test, specified by design 6VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 resistor in GND connection. A resistor for the protection of the input is integrated.
ITS4142N Features
• Short circuit protection • Current limitation • Overload protection • Overvoltage protection (including load dump) • Undervoltage shutdown with autorestart and hysteresis • Switching inductive loads • Clamp of negative voltage at output with inductive loads • CMOS compatible input • Thermal shutdown with restart • ESD - Protection • Loss of GND and loss of Vbb protection • Very low standby current • Reverse battery protection with external resistor • Improved electromagnetic compatibility (EMC)
ITS4142N Typical Application
• All types of resistive, inductive and capacitive loads • µC compatible power switch for 12 V and 24 V DC industrial applications • Replaces electromechanical relays and discrete circuits
ITS428L2 Parameters
Technical/Catalog Information
ITS428L2
Vendor
Infineon Technologies
Category
Integrated Circuits (ICs)
Package / Case
DPak, TO-252 (4 leads + tab)
Mounting Type
Surface Mount
Type
High Side
Voltage - Supply
4.75 V ~ 43 V
On-State Resistance
50 mOhm
Current - Output / Channel
7A
Current - Peak Output
22A
Packaging
Tape & Reel (TR)
Input Type
Non-Inverting
Number of Outputs
1
Operating Temperature
-30°C ~ 85°C
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
ITS428L2 ITS428L2
ITS428L2 General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. • Providing embedded protective functions
ITS428L2 Maximum Ratings
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 4)
Vbb
43
V
Supply voltage for full short circuit protection Tj Start=-40 ...+150
Vbb
24
V
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V RI2)= 2 , RL= 4.0 , td= 200 ms, IN= low or high
VLoad dump3)
60
V
Load current (Current limit, see page 5)
IL
self-limited
A
Junction temperature
Operating temperature range
Storage temperature range
Tj
Ta
Tstg
150
-30 ...+85
-40 ...+105
Power dissipation (DC), TC 25
Ptot
75
W
Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150, TC = 150 const. (See diagram on page 9) IL(ISO) = 7 A, RL = 0 ; E4)AS=0.19J:
ZL
5.6
mH
Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5k; C=100pF
VESD
1.0 4.0 8.0
kV
Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 8
VIN IIN IST
-10 ... +16 ±2.0 ±5.0
V mA
1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 resistor for the GND connection is recommended). 2) RI = internal resistance of the load dump test pulse generator 3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4) EAS is the maximum inductive switch-off energy 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air.
ITS428L2 Typical Application
• µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads in industrial applications • All types of resistive, inductive and capacitve loads • Most suitable for loads with high inrush currents, so as lamps • Replaces electromechanical relays, fuses and discrete circuits
