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IXDP20N60B, IXDP20N60BD1, IXDP35N60B

Table of contents:
Info of IXDP20N60B
Info of IXDP20N60BD1
Info of IXDP35N60B

IXDP20N60B, IXDP20N60BD1, IXDP35N60B Selling Leads, Datasheet

MFG:IXYS Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:08+

IXDP20N60B, IXDP20N60BD1, IXDP35N60B Picture

IXDP20N60B, IXDP20N60BD1, IXDP35N60B Datasheet download

Five Points

Part Number: IXDP20N60B

Category: Discrete Semiconductor Products

MFG: IXYS

Package Cooled: TO-220

D/C: 08+

Description: IGBT 600V 60A W/DIODE TO-220AB

Price Break

150

Unit Price

2.66000

Extended Price

399.00

(All prices are in USD) Prices for reference only

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IXDP20N60B Parameters

Technical/Catalog Information	IXDP20N60B
Vendor	IXYS
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	32A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 20A
Power - Max	140W
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXDP20N60B IXDP20N60B

IXDP20N60BD1 Parameters

Technical/Catalog Information	IXDP20N60BD1
Vendor	IXYS
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	32A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 20A
Power - Max	140W
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXDP20N60BD1 IXDP20N60BD1

IXDP35N60B Parameters

Technical/Catalog Information	IXDP35N60B
Vendor	IXYS
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	60A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 35A
Power - Max	250W
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXDP35N60B IXDP35N60B

IXDP35N60B Maximum Ratings

Symbol	Conditions	Maximum	Ratings
V_CES	T_J= 25 to 150	600	v
V_CGR	T_J = 25 to 150; R_GE = 20K	600	v
V_GES	Continuous	±20	V
V_GEM	Transient	±30	V
I_C25	T_C = 25,	60	A
I_C90	T_C = 90	35	A
I_CM	T_C = 90°C,tp= 1 ms	70	A
RBSOA	V_GE= 15 V, T_VJ = 125, R_G = 10 Clamped inductive load, L = 30 H	I_CM =110 V_CEK < V_CES	A
TSC (SCSOA)	V_GE= 15 V, V_CES= 1200V, T_J = 125°C R_G = 10 Ω non repetitive	10	µs
P_C	T_C = 25IGBT Diode	250 80	W W
T_J		-55 ... +150
T_JM		-55 ... +150
	Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s	300
M_d	Mounting torque TO-220 TO-247	0.4 - 0.6 0.8 - 1.2	Nm Nm
Weight	TO-247	6	g

IXDP35N60B Features

·NPT IGBT technology
·low switching losses
·low tail current
·no latch up
·short circuit capability
·positive temperature coefficient for easy paralleling
·MOS input, voltage controlled
·optional ultra fast diode
·International standard package

IXDP35N60B Typical Application

·AC motor speed control
·DC servo and robot drives
·DC choppers
·Uninteruptible power supplies (UPS)
·Switch-mode and resonant-mode power supplies

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