K4S560432J, K4S560432J-UC75, K4S56082H-UC75 Selling Leads, Datasheet
MFG:SAMSUNG Package Cooled:09+ D/C:09+
K4S560432J, K4S560432J-UC75, K4S56082H-UC75 Datasheet download
Part Number: K4S560432J
MFG: SAMSUNG
Package Cooled: 09+
D/C: 09+
K4S560432J, K4S560432J-UC75, K4S56082H-UC75
- Table of contents:
Info of K4S560432J
Info of K4S560432J-UC75
Info of K4S56082H-UC75
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About K4S160822D
PDF/DataSheet Download
Datasheet: K4S160822D
File Size: 1211444 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
About K4S160822D
PDF/DataSheet Download
Datasheet: K4S160822D
File Size: 1211444 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
About K4S160822D
PDF/DataSheet Download
Datasheet: K4S160822D
File Size: 1211444 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
K4S560432J-UC75 General Description
The K4S560432J-UC75 is designed as 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
It has eleven features. (1) JEDEC standard 3.3V power supply. (2) LVTTL compatible with multiplexed address. (3) Four banks operation. (4) MRS cycle with address key programs which means CAS latency (2 & 3), burst length (1, 2, 4, 8 & full page) and burst type (sequential & interleave). (5) All inputs are sampled at the positive going edge of the system clock. (6) Burst read single-bit write operation. (7) DQM (x4,x8) & L(U)DQM (x16) for masking. (8) Auto & self refresh. (9) 64ms refresh period (8K cycle). (10) Lead-free & halogen-free package. (11) RoHS compliant. That are all the main features.
Some absolute maximum ratings have been concluded into several points as follow. (1) Its voltage on any pin relative to Vss would be from -1.0V to 4.6V. (2) Its voltage on Vdd supply relative to Vss would be from -1.0V to 4.6V. (3) Its storage temperature would be from -55°C to +150°C. (4) Its power dissipation would be 1W. (5) Its short circuit current would be 50mA. It should be noted that permanent device damage may occur if "absolute maximum ratings" are exceeded.
Also some DC operating conditions about it. (1) Its supply voltage should be min 3.0V and typ 3.3V and max 3.6V. (2) Its input logic high voltage should be min 2.0V and typ 3.0V and max Vdd+0.3V. (3) Its input logic low voltage should be min -0.3V and typ 0V and max 0.8V. (4) Its input leakage current would be min -10uA and max 10uA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!
K4S560432J-UC75 Connection Diagram
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