K7N801845B, K7N801845BHC13, K7N801845B-HC13 Selling Leads, Datasheet
MFG:3266 Package Cooled:QFP D/C:08+
K7N801845B, K7N801845BHC13, K7N801845B-HC13 Datasheet download
Part Number: K7N801845B
MFG: 3266
Package Cooled: QFP
D/C: 08+
MFG:3266 Package Cooled:QFP D/C:08+
K7N801845B, K7N801845BHC13, K7N801845B-HC13 Datasheet download
MFG: 3266
Package Cooled: QFP
D/C: 08+
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PDF/DataSheet Download
Datasheet: K7N801845B
File Size: 388971 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: K7N04FM
File Size: 172872 KB
Manufacturer: STMicro
Download : Click here to Download
PDF/DataSheet Download
Datasheet: K7N04FM
File Size: 172872 KB
Manufacturer: STMicro
Download : Click here to Download
The K7N803645B and K7N801845B are 9,437,184 bits Synchronous Static SRAMs.
The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.Burst order control must be tied "High or Low".Asynchronous inputs include the sleep mode enable(ZZ).Output Enable controls the outputs at any given time.Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex offchip write pulse generation and provides increased timing flexibility for incoming signals. For read cycles, pipelined SRAM output data is temporarily stored by an edge triggered output register and then released to the output buffers at the next rising edge of clock.
The K7N803645B and K7N801845B are implemented with SAMSUNGs high performance CMOS technology and is available in 100pin TQFP and Multiple power and ground pins minimize ground bounce
PARAMETER | SYMBOL | RATING | UNIT | |
Voltage on VDD Supply Relative to VSS | VDD | -0.3 to 4.6 | V | |
Voltage on Input Pin Relative to VSS | VIN | -0.3 to VDD+0.3 | V | |
Power Dissipation | PD | 1.4 | W | |
Storage Temperature | TSTG | -65 to 150 | °C | |
Operating Temperature | Commercial | TOPR | 0 to 70 | °C |
Industrial | -40 to 85 | |||
Storage Temperature Range Under Bias | TBIAS | -10 to 85 | °C |
*Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VDDQ must not exceed VDD during normal operation.