K9T1G08U0A-PCB0, K9T1G08U0A-PIB0, K9T1G08U0M

Offered in 128Mx8bits, the K9T1G08U0M is 1Gbit with spare 32Mbit capacity. The device is offered in 3.3V Vcc. Its NAND cell providesthe most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200son the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chipwrite control automates all program and erase functions including pulse repetition, where required, and internal verification and marginingof data. Even the write-intensive systems can take advantage of the K9T1G08U0Ms extended reliability of 100K rogram/ rase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9T1G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portableapplications requiring non-volatility.