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KBJ610, KBJ610G, KBJ6A

Table of contents:
Info of KBJ610
Info of KBJ610G
Info of KBJ6A

KBJ610, KBJ610G, KBJ6A Selling Leads, Datasheet

MFG:Diodes Inc Category:Discrete Semiconductor Products Package Cooled:07+

KBJ610, KBJ610G, KBJ6A Datasheet download

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Part Number: KBJ610

Category: Discrete Semiconductor Products

MFG: Diodes Inc

Package Cooled: 07+

D/C:

Description: RECT BRIDGE GPP 6A 1000V KBJ

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KBJ610G Parameters

Technical/Catalog Information	KBJ610G
Vendor	Diodes Inc
Category	Discrete Semiconductor Products
Diode Type	Single Phase
Package / Case	KBJ
Packaging	Tube
Reverse Recovery Time (trr)	-
Speed	Standard Recovery >500ns, > 200mA (Io)
Current - DC Forward (If)	6A
Voltage - Peak Reverse (Max)	1000V
Mounting Type	Through Hole
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	KBJ610G KBJ610G

KBJ610G Maximum Ratings

Characteristic	Symbol	KBJ 6005G	KBJ 601G	KBJ 602G	KBJ 604G	KBJ 606G	KBJ 608G	KBJ 610G	Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage	V_RRM V_RWM V_R	50	100	200	400	600	800	1000	V
RMS Reverse Voltage	V_R(RMS)	35	70	140	280	420	560	700	V
Average Rectified Output Current @TA = 50°C	I_O	6.0							A
Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load	I_FSM	170							A
Forward Voltage per element @ IF = 3.0A	V_FM	1.0							V
Peak Reverse Current @ TC = 25°C at Rated DC Blocking Voltage @ TC = 125°C	I_RM	5.0 500							A mA
I2t Rating for Fusing (t < 8.3ms) (Note 3)	I_2t	120							A2s
Typical Total Capacitance per Element (Note 1)	C_T	80							pF
Typical Thermal Resistance (Note 2)	R_JC	1.5							°C/W
Operating and Storage Temperature Range	T_j, T_STG	-65 to +150							°C

Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.
3. Non-repetitive, for t > 1ms and < 8.3ms.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.

KBJ610G Features

· Glass Passivated Die Construction
· High Case Dielectric Strength of 1500VRMS
· Low Reverse Leakage Current
· Surge Overload Rating to 170A Peak
· Ideal for Printed Circuit Board Applications
· UL Listed Under Recognized Component Index, FileNumber E94661
· Lead Free Finish, RoHS Compliant (Note 4)

KBJ6A Maximum Ratings

Characteristic	Symbol	KBJ6A	KBJ6B	KBJ6D	KBJ6G	KBJ6J	KBJ6K	KBJ6M	Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage	V_RRM V_RWM V_R	50	100	200	400	600	800	1000	V
RMS Reverse Voltage	V_R(RMS)	35	70	140	280	420	560	700	V
Average Rectified Output Current @T_C = 100°C @T_A = 25°C	I_O	6.0 2.8							A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)	I_FSM	170							A
I²t Rating for Fusing (t < 8.35ms)	I²t	100							A²s
Forward Voltage (per diode) @I_F = 2.0A	V_FM	1.05							V
TPeak Reverse Current @T_A = 25°C At Rated DC Blocking Voltage @T_C = 100°C	I_R	5.0 500							A
Typical Thermal Resistance (per leg) (Note 1)	R_JA	26							K/W
Typical Thermal Resistance (per leg) (Note 2)	R_JC	3.4							K/W
Operating and Storage Temperature Range	T_j,T_STG	-55 to +150							°C

Note: 1. Thermal resistance junction to ambient, mounted on PCB at 9.5mm lead length.
2. Thermal resistance junction to case, mounted on 7.5 x 7.5 x 0.8cm thick AL plate heatsink.

KBJ6A Features

· Diffused Junction
· Low Forward Voltage Drop
· High Current Capability
· High Reliability
· High Surge Current Capability
·Ideal for Printed Circuit Boards

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