KGF1323L, KGF1522, KGF1531 Selling Leads, Datasheet
MFG:OKI Package Cooled:SOT-23-5 D/C:08+09+
KGF1323L, KGF1522, KGF1531 Datasheet download
Part Number: KGF1323L
MFG: OKI
Package Cooled: SOT-23-5
D/C: 08+09+
KGF1323L, KGF1522, KGF1531
- Table of contents:
Info of KGF1323L
Info of KGF1522
Info of KGF1531
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About KGF1145
PDF/DataSheet Download
Datasheet: KGF1145
File Size: 182994 KB
Manufacturer: OKI [OKI electronic componets]
Download : Click here to Download
About KGF1522
PDF/DataSheet Download
Datasheet: KGF1522
File Size: 104436 KB
Manufacturer: OKI [OKI electronic componets]
Download : Click here to Download
About KGF1531
PDF/DataSheet Download
Datasheet: KGF1531
File Size: 117432 KB
Manufacturer: OKI [OKI electronic componets]
Download : Click here to Download
KGF1522 General Description
The KGF1522 is a high performance GaAs FET small-signal amplifier for L-band frequencies that eatures low voltage operation, low current operation, low noise, and low distortion. The GF1522 specifications are guaranteed to a fixed matching circuit for 3 V and 1.9 GHz; external mpedance-matching circuits are also required. Because of its high 3rd-order intercept point, ven at its low operating current, the KGF1522 is ideal as a signal amplifier for L-band personal andy phones, such as digital keying cordless phones that require low intermodulation properties.
KGF1522 Maximum Ratings
|
Item |
Symbol |
Condition |
Unit |
Min. |
Max. |
| Drain-Source voltage |
VDS |
Ta = 25°C |
V |
- |
4.0 |
| Gate-Source voltage |
VGS |
Ta = 25°C |
V |
-3.0 |
0.4 |
| Drain current |
IDS |
Ta = 25°C |
mA |
- |
50 |
| Total power dissipation |
Ptot |
Ta = 25°C |
mW |
- |
200 |
| Channel temperature |
Tch |
- |
|
- |
150 |
| Storage temperature |
Tstg |
- |
|
45 |
125 |
KGF1522 Features
• Low voltage and low current operation: 3 V, 5 mA (max.)
• Specifications guaranteed to a fixed matching circuits for 3 V, 1.9 GHz
• Low noise figure: 1.3 dB (typ.) at 1.9 GHz
• High linear gain: 12.5 dB (typ.) at 1.9 GHz
• High output power: 1 dB compression point = 4.5 dBm (typ.) at 1.9 GHz
• Low distortion: 3rd-order intercept point = 17 dBm (typ.) at 1.9 GHz
• Self-bias circuit configuration with built-in source capacitor
• Package: 4PSOP
• Specifications guaranteed to a fixed matching circuits for 3 V, 1.9 GHz
• Low noise figure: 1.3 dB (typ.) at 1.9 GHz
• High linear gain: 12.5 dB (typ.) at 1.9 GHz
• High output power: 1 dB compression point = 4.5 dBm (typ.) at 1.9 GHz
• Low distortion: 3rd-order intercept point = 17 dBm (typ.) at 1.9 GHz
• Self-bias circuit configuration with built-in source capacitor
• Package: 4PSOP
KGF1531 General Description
The KGF1531 is a high-performance GaAs FET small-signal dual-gate mixer for L-band frequencies hat features low voltage operation, low current operation, high conversion gain, and low istortion. The KGF1531 specifications are guaranteed to a fixed matching circuit for 3 V and 1.9 Hz; external impedance-matching circuits are also required. Because of the high 3rd-order ntercept point, the KGF1531 is ideal as a small-signal receiving mixer for L-band personal handy hones, such as digital keying cordless phones that require low intermodulation properties.
KGF1531 Maximum Ratings
|
Item |
Symbol |
Condition |
Unit |
Min. |
Max. |
| Drain-Source voltage |
VDS |
Ta = 25°C |
V |
- |
4.0 |
| Gate-Source voltage |
VGS |
Ta = 25°C |
V |
-3.0 |
0.4 |
| Drain current |
IDS |
Ta = 25°C |
mA |
- |
50 |
| Total power dissipation |
Ptot |
Ta = 25°C |
mW |
- |
200 |
| Channel temperature |
Tch |
- |
|
- |
150 |
| Storage temperature |
Tstg |
- |
|
45 |
125 |
KGF1531 Features
• Low voltage and low current operation: 3 V, 8 mA (max.)
• Specifications guaranteed as the mixer operation to a fixed matching circuits for 3 V, 1.9 GHz
• High conversion gain: 12 dB (typ.) at 1.9 GHz
• Low distortion: 3rd-order intercept point = 12.5 dBm (typ.) at 1.9 GHz
• Self-bias circuit configuration with built-in source capacitor
• Package: 4PSOP
• Specifications guaranteed as the mixer operation to a fixed matching circuits for 3 V, 1.9 GHz
• High conversion gain: 12 dB (typ.) at 1.9 GHz
• Low distortion: 3rd-order intercept point = 12.5 dBm (typ.) at 1.9 GHz
• Self-bias circuit configuration with built-in source capacitor
• Package: 4PSOP
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