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KM416V4004B, KM416V4004C, KM416V4004CS-6

Table of contents:
Info of KM416V4004B
Info of KM416V4004C
Info of KM416V4004CS-6

KM416V4004B, KM416V4004C, KM416V4004CS-6 Selling Leads, Datasheet

MFG:SAMSUNG Package Cooled:TSSOP D/C:07+

KM416V4004B, KM416V4004C, KM416V4004CS-6 Picture

KM416V4004B, KM416V4004C, KM416V4004CS-6 Datasheet download

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Part Number: KM416V4004B

MFG: SAMSUNG

Package Cooled: TSSOP

D/C: 07+

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KM416V4004B General Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high peed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung ¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

KM416V4004B Maximum Ratings

Parameter	Symbol	Rating	Units
Voltage on any pin relative to VSS	V_IN,V_OUT	-0.5 to +6.5	V
Voltage on VCC supply relative to VSS	V_CC	-0.5 to +4.6	A
Storage Temperature	T_stg	-55 to +150
Power Dissipation	P_D	1	W
Short Circuit Output Current	I_OS	50	mA

* Permanent device damage may occur if " ABSOLUTE MAXIMUM RATINGS" are
   exceeded. Functional operation should be restricted to the conditions as
   detailed in the operational sections of this data sheet. Exposure to absolute
   maximum rating conditions for extended periods may affect device reliability.

KM416V4004B Features

• Part Identification - KM416V4004B/B-L(3.3V, 8K Ref.) - KM416V4104B/B-L(3.3V, 4K Ref.)
• Extended Data Out Mode operation
• 2 RAS Byte/Word Read/Write operation
• RAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• Self-refresh capability (L-ver only)
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply

KM416V4004B Connection Diagram

KM416V4004C General Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung ¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

KM416V4004C Maximum Ratings

Parameter	Symbol	Rating	Unit
Voltage on any pin relative to VSS	V_IN, V_OUT	-0.5 to +4.6	V
Voltage on VCC supply relative to VSS	V_CC	-0.5 to +4.6	V
Storage temperature	T_STG	-55 to +150	°C
Power dissipation	P_D	1.0	W
Short circuit current	I_OS	50	mA

Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

KM416V4004C Features

• Part Identification
- KM416V4004C/C-L(3.3V, 8K Ref.)
- KM416V4104C/C-L(3.3V, 4K Ref.)
• Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• Self-refresh capability (L-ver only)
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply

KM416V4004C Connection Diagram

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