KM41256A

The KM41256A is designed as a fully decoded NMOS dynamic random access memory organized as 262144 one-bit words. The design is optimized for high speed, high performance applications such as computer memory, buffer memory, peripheral storage and environments where low power dissipation and compact layout are required.

It has eight features. (1)Page mode capability. (2)CAS-before-RAS refresh capability. (3)RAS only and hidden refresh capability. (4)TTL compatible inputs and output. (5)Common I/O using early write. (6)Single +5V +/-10% power supply. (7)256 cycle/4ms refresh. (8)JEDEC standard pinout in 16-pin plastic DIP, 18 lead PLCC and 16-pin plastic ZIP. That are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its voltage on any pin relative to Vss would be from -1V to +7.0V. (2)Its voltage on Vcc supply relative to Vss would be from -1V to +7.0V. (3)Its storage temperature range would be from -55°C to +150°C. (4)Its power dissipation would be 1.0W. (5)Its short circuit output current would be 50mA. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some DC characteristics are concluded as follow. (1)Its operating current would be max 85mA. (2)Its standby current would be max 4.5mA. (3)Its RAS only refresh current would be max 70mA. (4)Its page mode current would be max 65mA. (5)Its nibble mode current would be max 65mA. (6)Its CAS-before-RAS refresh current would be max 70mA. (7)Its input leakage current would be min -10uA and max 10uA. (8)Its output leakage current would be min -10uA and max 10uA. (9)Its output high voltage level would be min 2.4V with condition of Ioh=-5mA. (10)Its output low voltage level would be max 0.4V with condition of Iol=4.2mA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!