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The L6385 is an high-voltage device, manufac- tured with the BCD"OFF-LINE" technology. It has a Driver structure that enables to drive inde- pendent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic In- puts are CMOS/TTL compatible for ease of inter- facing with controlling devices.
L6385 Maximum Ratings
Symbol
Parameter
Value
Unit
Vout
Output Voltage
-3 to Vboot - 18
V
Vcc
Supply Voltage
- 0.3 to +18
V
Vboot
Floating Supply Voltage
- 1 to 618
V
Vhvg
Upper Gate Output Voltage
- 1 to Vboot
V
Vlvg
Lower Gate Output Voltage
-0.3 to Vcc +0.3
V
Vi
Logic Input Voltage
-0.3 to Vcc +0.3
V
dVout/dt
Allowed Output Slew Rate
50
V/ns
Ptot
Total Power Dissipation (Tj = 85 °C)
750
mW
Tj
Junction Temperature
150
°C
Ts
Storage Temperature
-50 to 150
°C
Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900V (Human Body Model)