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Part Number: L6316
Description: The L6316 is a BICMOS Silicon Germanium integrated circuit differential preamplifier. It is designed f...
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L6316
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General Description
L6316 General Description
The L6316 is a BICMOS Silicon Germanium integrated circuit differential preamplifier. It is designed for use with four-terminal MR read and inductive write heads. In read mode, the device consists of a fully differential amplifier, offering; voltage or current bias, voltage-sense input, programmable input impedance, low noise and high bandwidth. In write mode, it includes fast current switching differential write drivers, which support data rates up to 1200 Mb/s.
This preamplifier provides programmable read voltage or current bias and write current (5 bit DACs for the read bias and for the write current), fault detection circuitry and servo track writing features. Read amplifier gain, low corner frequency, and write current wave shape are adjustable. The amplitude and duration of the overshoot are separately programmable through a 16-bit bi-directional serial interface (SEN, SDATA, and SCLK). The device operates from +5V and -3V supplies.
L6316 Features
Dual Power Supplies of +5V, 10% and -3v, 6%
Low Power consumption; 980 mW @ 800Mb/s (Single Head 100% Write mode duty cycle, Random pattern, Iw = 40mA, Max Ovs).
Flip Chip package.L6316
Differential Voltage Bias / Voltage Sense architecture. Current Bias available
Programmable read input differential impedance.
Selectable read path bandwidth from 200 to >600 MHz (Rmr=40). (Parameter dependent on interconnect)
Selectable LF corner (1, 2.5, 3.5 or 5.5 MHz with RMR=40).
Noise Figure of merit; 2.2 dB (Rmr=40)
MR bias voltage programmable from 70 to 225 mV nom. (5 bits) (7.2mA max).
MR bias current programmable from 0.65 to 7.2 mA nom. (5 bits) (225mV max).
Read input stage optimized for MR resistance from 20 to 70 Ohm.
Programmable read voltage gain of 37, 40, 43, 46 dB Rmr = 40, Rload = 100
Fully Differential write driver: Programmable overshoot amplitude (3bits) and duration (2bits).
Write current rise/fall time with custom head and interconnect model 140 pS at 40 mA (10% to 90%) (Steady state to steady state)
Write current amplitude programmable (5 bits) 0 to 62 mA (0-pk).
Bi-directional 16-bit serial interface 2.5V and 3.3V CMOS compatible.
2-pin (RXW and TFI), 2 bits mode selection (WAKE, ENTFI).
All control signals are 2.5 & 3.3V CMOS compatible.
Analog buffered head voltage ABHV (gain of 5)
Automatic digital MR resistance measurement (7 bits).
Read head open detection, Read head shorted detection.
Write head open or shorted to ground, Writer to Reader short, write data frequency too low detection.
SAFEDETECT method for write fault detection.
Low VCC or VEE supply & die over temperature detect, Analog Temperature Measurement.
Fast write-to-read recovery 150nS (max) (same head).
Head-to-head switch in read mode 1.5us (nom).
Zero MR bias, very low power (43mW) idle mode with fast recovery to read mode 1.5us (nom).
MR bias switching without overshoot for head protection.
Read-to-Write switching 50nS (max) (same head).
ESD diodes for MR head protection
Low Power consumption; 980 mW @ 800Mb/s (Single Head 100% Write mode duty cycle, Random pattern, Iw = 40mA, Max Ovs).
Flip Chip package.L6316
Differential Voltage Bias / Voltage Sense architecture. Current Bias available
Programmable read input differential impedance.
Selectable read path bandwidth from 200 to >600 MHz (Rmr=40). (Parameter dependent on interconnect)
Selectable LF corner (1, 2.5, 3.5 or 5.5 MHz with RMR=40).
Noise Figure of merit; 2.2 dB (Rmr=40)
MR bias voltage programmable from 70 to 225 mV nom. (5 bits) (7.2mA max).
MR bias current programmable from 0.65 to 7.2 mA nom. (5 bits) (225mV max).
Read input stage optimized for MR resistance from 20 to 70 Ohm.
Programmable read voltage gain of 37, 40, 43, 46 dB Rmr = 40, Rload = 100
Fully Differential write driver: Programmable overshoot amplitude (3bits) and duration (2bits).
Write current rise/fall time with custom head and interconnect model 140 pS at 40 mA (10% to 90%) (Steady state to steady state)
Write current amplitude programmable (5 bits) 0 to 62 mA (0-pk).
Bi-directional 16-bit serial interface 2.5V and 3.3V CMOS compatible.
2-pin (RXW and TFI), 2 bits mode selection (WAKE, ENTFI).
All control signals are 2.5 & 3.3V CMOS compatible.
Analog buffered head voltage ABHV (gain of 5)
Automatic digital MR resistance measurement (7 bits).
Read head open detection, Read head shorted detection.
Write head open or shorted to ground, Writer to Reader short, write data frequency too low detection.
SAFEDETECT method for write fault detection.
Low VCC or VEE supply & die over temperature detect, Analog Temperature Measurement.
Fast write-to-read recovery 150nS (max) (same head).
Head-to-head switch in read mode 1.5us (nom).
Zero MR bias, very low power (43mW) idle mode with fast recovery to read mode 1.5us (nom).
MR bias switching without overshoot for head protection.
Read-to-Write switching 50nS (max) (same head).
ESD diodes for MR head protection
L6316
PDF/DataSheet Download
- Datasheet: L6316
- File Size: 44735 KB
- Manufacturer: ST
- Click here to Download
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