MFG:STMicroelectronics Category:Integrated Circuits (ICs) Package Cooled:DIP8 D/C:08+/09+
L6560, L6560A, L6560AD Datasheet download
Category: Integrated Circuits (ICs)
MFG: STMicroelectronics
Package Cooled: DIP8
D/C: 08+/09+
Description: IC PWR FACTOR CORRECTOR 8 SOIC
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PDF/DataSheet Download
Datasheet: L6560
File Size: 126592 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: L6560A
File Size: 126592 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: L6560AD
File Size: 126592 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The L6560/A is a monolithic integrated circuit in Minidip and SO8 packages, designed as a controller and driver of a discrete power MOS transistor for the implementation of active power factor correction, for sinusoidal line current consumption.
Realized in mixed BCD technology, the chip integrates:
- An undervoltage lockout with micropower startup and hysteresis.
- An internal temperature compensated precise band gap reference.
- A stable error amplifier.
- One quadrant multiplier.
- Current sense comparator.
- An output overvoltage protection circuit.
- A totem-pole output stage able to drive a POWER MOS or IGBT devices with source and sink current of 400mA. The chip works in transition mode and is particularly intended for lamp ballast applications and for low power SMPS.
| Symbol | Pin | Parameter | Value | Unit |
| IVcc | 8 | ICC + IZ | 30 | mA |
| IGD | 7 | Output Totem Pole Peak Current (2s) | ±700 | mA |
| INV, COMP MULT |
1, 2, 3 | Analog Inputs & Outputs | -0.3 to 7 | V |
| CS | 4 | Current Sense Input | -0.3 to 7 | V |
| ZCD | 5 | Zero Current Detector | 5 (source) 10 (sink) |
mA mA |
| Ptot | Power Dissipation @Tamb = 50 °C (Minidip) (SO8) |
1 0.65 |
W | |
| Tj | Junction Temperature Operating Range | -25 to 150 | °C | |
| Tstg | Storage Temperature | -55 to 150 | °C |
The L6560/A is a monolithic integrated circuit in Minidip and SO8 packages, designed as a controller and driver of a discrete power MOS transistor for the implementation of active power factor correction, for sinusoidal line current consumption.
Realized in mixed BCD technology, the chip integrates:
- An undervoltage lockout with micropower startup and hysteresis.
- An internal temperature compensated precise band gap reference.
- A stable error amplifier.
- One quadrant multiplier.
- Current sense comparator.
- An output overvoltage protection circuit.
- A totem-pole output stage able to drive a POWER MOS or IGBT devices with source and sink current of 400mA. The chip works in transition mode and is particularly intended for lamp ballast applications and for low power SMPS.
| Symbol | Pin | Parameter | Value | Unit |
| IVcc | 8 | ICC + IZ | 30 | mA |
| IGD | 7 | Output Totem Pole Peak Current (2s) | ±700 | mA |
| INV, COMP MULT |
1, 2, 3 | Analog Inputs & Outputs | -0.3 to 7 | V |
| CS | 4 | Current Sense Input | -0.3 to 7 | V |
| ZCD | 5 | Zero Current Detector | 5 (source) 10 (sink) |
mA mA |
| Ptot | Power Dissipation @Tamb = 50 °C (Minidip) (SO8) |
1 0.65 |
W | |
| Tj | Junction Temperature Operating Range | -25 to 150 | °C | |
| Tstg | Storage Temperature | -55 to 150 | °C |
| Technical/Catalog Information | L6560AD |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Packaging | Tube |
| Package / Case | 8-SOIC (3.9mm Width) |
| Voltage - Supply | 11 V ~ 18 V |
| Mode | Discontinuous (Transition) |
| Frequency - Switching | - |
| Current - Startup | 300A |
| Operating Temperature | -20°C ~ 150°C |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | L6560AD L6560AD 497 1438 5 ND 49714385ND 497-1438-5 |
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