MFG:STMicroelectronics Category:Integrated Circuits (ICs) Package Cooled:DIP-8 D/C:07+
L6569, L6569(A), L6569A Datasheet download
Category: Integrated Circuits (ICs)
MFG: STMicroelectronics
Package Cooled: DIP-8
D/C: 07+
Description: IC DRIVER HALF BRDG W/OSC 8-DIP
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PDF/DataSheet Download
Datasheet: L6569
File Size: 112826 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: L6506
File Size: 77997 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: L6569A
File Size: 112826 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | L6569 |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Configuration | Half Bridge |
| Voltage - Supply | 10 V ~ 16.6 V |
| Current - Peak | 175mA |
| Delay Time | - |
| Package / Case | 8-DIP (300 mil) |
| Packaging | Tube |
| Number of Outputs | 2 |
| Input Type | Self Oscillating |
| Number of Configurations | 1 |
| Operating Temperature | -40°C ~ 125°C |
| High Side Voltage - Max (Bootstrap) | 600V |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | L6569 L6569 497 4217 5 ND 49742175ND 497-4217-5 |
The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can be programmed using external resistor and capacitor. The internal circuitry of the device allows it to be driven also by external logic signal.
The output drivers are designed to drive external nchannel power MOSFET and IGBT. The internal logic assures a dead time [typ. 1.25s] to avoid crossconduction of the power devices.
Two version are available: L6569 and L6569A. They differ in the low voltage gate driver start up sequence.
| Symbol | Parameter | Value | Unit |
| IS (*) | Supply Current | 25 | mA |
| VCF | Oscillator Resistor Voltage | 18 | V |
| VLVG | Low Side Switch Gate Output | 14.6 | V |
| VOUT | High Side Switch Source Output | -1 to VBOOT - 18 | V |
| VHVG | High Side Switch Gate Output | -1 to VBOOT | V |
| VBOOT | Floating Supply Voltage | 618 | V |
| VBOOT/OUT | Floating Supply vs OUT Voltage | 18 | V |
| dVBOOT/dt | VBOOT Slew Rate (Repetitive) | ± 50 | V/ns |
| dVOUT/dt | VOUT Slew Rate (Repetitive) | ± 50 | V/ns |
| Tstg | Storage Temperature | -40 to 150 | °C |
| Tj | Junction Temperature | -40 to 150 | °C |
| Tamb | Ambient Temperature (Operative) | -40 to 125 | °C |
| Technical/Catalog Information | L6569A |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Configuration | Half Bridge |
| Voltage - Supply | 10 V ~ 16.6 V |
| Current - Peak | 175mA |
| Delay Time | - |
| Package / Case | 8-DIP (300 mil) |
| Packaging | Tube |
| Number of Outputs | 2 |
| Input Type | Self Oscillating |
| Number of Configurations | 1 |
| Operating Temperature | -40°C ~ 125°C |
| High Side Voltage - Max (Bootstrap) | 600V |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | L6569A L6569A 497 3654 ND 4973654ND 497-3654 |
The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can be programmed using external resistor and capacitor. The internal circuitry of the device allows it to be driven also by external logic signal.
The output drivers are designed to drive external nchannel power MOSFET and IGBT. The internal logic assures a dead time [typ. 1.25s] to avoid crossconduction of the power devices.
Two version are available: L6569 and L6569A. They differ in the low voltage gate driver start up sequence.
| Symbol | Parameter | Value | Unit |
| IS (*) | Supply Current | 25 | mA |
| VCF | Oscillator Resistor Voltage | 18 | V |
| VLVG | Low Side Switch Gate Output | 14.6 | V |
| VOUT | High Side Switch Source Output | -1 to VBOOT - 18 | V |
| VHVG | High Side Switch Gate Output | -1 to VBOOT | V |
| VBOOT | Floating Supply Voltage | 618 | V |
| VBOOT/OUT | Floating Supply vs OUT Voltage | 18 | V |
| dVBOOT/dt | VBOOT Slew Rate (Repetitive) | ± 50 | V/ns |
| dVOUT/dt | VOUT Slew Rate (Repetitive) | ± 50 | V/ns |
| Tstg | Storage Temperature | -40 to 150 | °C |
| Tj | Junction Temperature | -40 to 150 | °C |
| Tamb | Ambient Temperature (Operative) | -40 to 125 | °C |
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