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LPC660, LPC660AIM/IM, LPC660AIN

LPC660, LPC660AIM/IM, LPC660AIN Selling Leads, Datasheet

MFG:NS  Package Cooled:SOP  D/C:New

LPC660, LPC660AIM/IM, LPC660AIN Picture

LPC660, LPC660AIM/IM, LPC660AIN Datasheet download

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Part Number: LPC660

 

MFG: NS

Package Cooled: SOP

D/C: New

 

 

 
 
 
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About LPC660

PDF/DataSheet Download

Datasheet: LPC660

File Size: 618362 KB

Manufacturer: NSC [National Semiconductor]

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About LPC1901-7D

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Datasheet: LPC1901-7D

File Size: 63657 KB

Manufacturer: POWER-ONE [Power-One]

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About LPC660AIN

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Datasheet: LPC660AIN

File Size: 618362 KB

Manufacturer: NSC [National Semiconductor]

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LPC660 General Description

`The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kW and 5 kW) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 1 mW.

`This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

`See the LPC662 datasheet for a Dual CMOS operational amplifier and LPC661 datasheet for a single CMOS operational amplifier with these same features.

LPC660 Maximum Ratings

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Differential Input Voltage                            ±Supply Voltage
Supply Voltage (V+ − V)                                                16V
Output Short Circuit to V+                                       (Note 11)
Output Short Circuit to V                                         (Note 1)
Lead Temperature
(Soldering, 10 sec.)                                                      260
Storage Temp. Range                                  −65 to +150
Junction Temperature (Note 2)                                     150
ESD Rating
(C = 100 pF, R = 1.5 kW)                                              1000V
Power Dissipation                                                       (Note 2)
Current at Input Pin                                                     ±5 mA
Current at Output Pin                                                 ±18 mA
Voltage at Input/Output Pin                (V+) + 0.3V, (V) − 0.3V
Current at Power Supply Pin                                          35 mA

LPC660 Features

` Rail-to-rail output swing
` Micropower operation: (1 mW)
` Specified for 100 kW and 5 kW loads
` High voltage gain: 120 dB
` Low input offset voltage: 3 mV
` Low offset voltage drift: 1.3 V/
` Input common-mode includes V−
` Operation range from +5V to +15V
` Low distortion: 0.01% at 1 kHz
` Slew rate: 0.11 V/s
` Full military temp. range available

LPC660 Typical Application

· High-impedance buffer
· Precision current-to-voltage converter
· Long-term integrator
· High-impedance preamplifier
· Active filter
·Sample-and-Hold circuit
·
Peak detector

LPC660 Connection Diagram

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