LVDT386, LVE200, LVE21050R Selling Leads, Datasheet
MFG:N/A Package Cooled:99 D/C:2007+
LVDT386, LVE200, LVE21050R Datasheet download
Part Number: LVDT386
MFG: N/A
Package Cooled: 99
D/C: 2007+
LVDT386, LVE200, LVE21050R
- Table of contents:
Info of LVDT386
Info of LVE200
Info of LVE21050R
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About LVDS
PDF/DataSheet Download
Datasheet: LVDS
File Size: 217469 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About LVE21050R
PDF/DataSheet Download
Datasheet: LVE21050R
File Size: 65316 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About LVE21050R
PDF/DataSheet Download
Datasheet: LVE21050R
File Size: 65316 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
LVE21050R General Description
NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the flange.
LVE21050R Maximum Ratings
|
Parameter |
Symbol |
Conditions |
Min. |
Max. |
Units |
|
collector-base voltage |
VCBO |
open emitter |
- |
40 |
V |
|
collector-emitter voltage |
VCER |
RBE = 47W |
- |
20 |
V |
| collector-emitter voltage |
VCEO |
open base |
- |
16 |
V |
|
emitter-base voltage |
VEBO |
open collector |
- |
3 |
V |
|
collector current (DC) |
IC |
2 |
A | ||
|
total power dissipation |
Ptot |
Tmb £ 75 °C |
- |
18 |
W |
|
storage temperature |
Tstg |
-65 |
+200 |
°C | |
|
operating junction temperature |
Tj |
- |
200 |
°C | |
|
soldering temperature |
Tsld |
at 0.3 mm from case; t £ 10 s |
- |
235 |
°C |
LVE21050R Features
· Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
· Self-aligned process entirely ion implanted
· Gold metallization ensures an optimum temperature profile with excellent performance and reliability
· Input matching cell improves input impedance and allows an easier design of wideband circuits.
· Self-aligned process entirely ion implanted
· Gold metallization ensures an optimum temperature profile with excellent performance and reliability
· Input matching cell improves input impedance and allows an easier design of wideband circuits.
LVE21050R Typical Application
· Common emitter class-A linear power amplifiers up to 4.2 GHz.
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