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LVE21050R

Features: · Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR· Self-aligned process entirely ion implanted· Gold metallization ensures an optimum temperature profile with excellent performance and reliability· Input matching cell improves input im...

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LVE21050R: Features: · Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR· Self-aligned process entirely ion implanted· Gold metallization ensures an optimum t...

LVE21050R Data Sheet

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Part Number:
LVE21050R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
· Self-aligned process entirely ion implanted
· Gold metallization ensures an optimum temperature profile with excellent performance and reliability
· Input matching cell improves input impedance and allows an easier design of wideband circuits.


Application

· Common emitter class-A linear power amplifiers up to 4.2 GHz.


Specifications

Parameter
Symbol
Conditions

Min.
Max.
Units
collector-base voltage
VCBO
open emitter
-
40
V
collector-emitter voltage
VCER
RBE = 47W
-
20
V
collector-emitter voltage
VCEO
open base
-
16
V
emitter-base voltage
VEBO
open collector
-
3
V
collector current (DC)
IC
2
A
total power dissipation
Ptot
Tmb £ 75 °C
-
18
W
storage temperature
Tstg
-65
+200
°C
operating junction temperature
Tj
-
200
°C
soldering temperature
Tsld
at 0.3 mm from case; t £ 10 s
-
235
°C



Description

NPN silicon planar epitaxial microwave power transistor LVE21050R in a SOT445A metal ceramic flange package with the emitter connected to the flange.




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