M25PE40-VMW6, M25PE40-VMW6T, M25PE80 Selling Leads, Datasheet
MFG:ST Package Cooled:SO8W D/C:8
M25PE40-VMW6, M25PE40-VMW6T, M25PE80 Datasheet download
Part Number: M25PE40-VMW6
MFG: ST
Package Cooled: SO8W
D/C: 8
M25PE40-VMW6, M25PE40-VMW6T, M25PE80
- Table of contents:
Info of M25PE40-VMW6
Info of M25PE40-VMW6T
Info of M25PE80
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About M258QAN
PDF/DataSheet Download
Datasheet: M258QAN
File Size: 290636 KB
Manufacturer: MTRONPTI [MTRONPTI]
Download : Click here to Download
About M258QAN
PDF/DataSheet Download
Datasheet: M258QAN
File Size: 290636 KB
Manufacturer: MTRONPTI [MTRONPTI]
Download : Click here to Download
About M25PE80
PDF/DataSheet Download
Datasheet: M25PE80
File Size: 613914 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
M25PE80 General Description
The M25PE80 is an 8 Mbit (1Mb x 8) Serial Paged Flash Memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction.
The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle. The memory is organized as 16 sectors, each containing 256 pages. Each page is 256 Bytes wide. Thus, the whole memory can be viewed as consisting of 4096 pages, or 1,048,576 Bytes.
The memory can be erased a page at a time, using the Page Erase instruction, a sector at a time, using the Sector Erase instruction, or as a whole, using the Bulk Erase instruction. The memory can be Write Protected by either Hardware or Software, with a protection granularity of either 64 KBytes (sector granularity) or 4 KBytes (sub-sector granularity inside sector 0 and sector 15 only).
M25PE80 Maximum Ratings
|
Symbol |
PARAMETER |
Min. |
Unit |
Max. |
|
TSTG |
Storage Temperature |
65 |
°C |
150 |
|
TLEAD |
Lead Temperature during Soldering |
See note 1 |
°C |
See note 1 |
|
VIO |
Input and Output Voltage (with respect to Ground) |
0.6 0.6 |
V |
4.0 |
|
VCC |
Electrostatic Discharge Voltage (Human Body model) 2 |
0.6 |
V |
4.0 |
|
VESD |
DC Output Diode Current |
-2000 |
V |
2000 |
M25PE80 Features
Industrial Standard SPI Pin-out
8 Mbits of Page-Erasable Flash Memory
Page Write (up to 256 Bytes) in 11ms (typical)
Page Program (up to 256 Bytes) in 1.2ms(typical)
Page Erase (256 Bytes) in 10ms (typical)
Sector Erase (512 Kbits)
Bulk Erase (8 Mbits)
2.7 to 3.6V Single Supply Voltage
SPI Bus Compatible Serial Interface
50MHz Clock Rate (maximum)
Deep Power-down Mode 1µA (typical)
Electronic Signature
JEDEC Standard Two-Byte Signature(8014h)
More than 100,000 Write Cycles
More than 20 Year Data Retention
Hardware Write Protection of the Top Sector(64KB)
Software Write Protection on a 64KByteSector Basis
Software Write Protection on a 4KByte SubsectorBasis for Sector 0 and Sector 15
8 Mbits of Page-Erasable Flash Memory
Page Write (up to 256 Bytes) in 11ms (typical)
Page Program (up to 256 Bytes) in 1.2ms(typical)
Page Erase (256 Bytes) in 10ms (typical)
Sector Erase (512 Kbits)
Bulk Erase (8 Mbits)
2.7 to 3.6V Single Supply Voltage
SPI Bus Compatible Serial Interface
50MHz Clock Rate (maximum)
Deep Power-down Mode 1µA (typical)
Electronic Signature
JEDEC Standard Two-Byte Signature(8014h)
More than 100,000 Write Cycles
More than 20 Year Data Retention
Hardware Write Protection of the Top Sector(64KB)
Software Write Protection on a 64KByteSector Basis
Software Write Protection on a 4KByte SubsectorBasis for Sector 0 and Sector 15
M25PE80 Connection Diagram
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