MFG:ST Package Cooled:SOP8 D/C:05+
MFG: ST
Package Cooled: SOP8
D/C: 05+
Description: The M25P05 is a 512 Kbit (64K x 8) Serial Flash Memory, with advanced write protection mechanisms, acc...
The M25P05 is a 512 Kbit (64K x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus.
The memory can be programmed 1 to 128 bytes at a time, using the Page Program instruction.
The memory is organized as 2 sectors, each containing 256 pages. Each page is 128 bytes wide. Thus, the whole memory can be viewed as consisting of 512 pages, or 65536 bytes.
The whole memory can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction.
|
Symbol |
Parameter |
Min. |
Max. |
Unit |
| TSTG | Storage Temperature |
65 |
150 |
|
| TLEAD | Lead Temperature during Soldering (20 seconds max.)1 |
235
|
||
| VIO | Input or Output range |
-.06 |
4.0 |
V |
| VCC | Supply Voltage |
0.6 |
4.0 |
V |
| VESD | Electrostatic Discharge Voltage (Human Body model) 2 |
2000 |
2000 |
V |
This device is now designated as "Not for New Design". Please use the M25P05-A in all future designs (as described in application note AN1511).
` 512 Kbit of Flash Memory
` Page Program (up to 128 Bytes) in 3 ms (typical)
` Sector Erase (256 Kbit) in 1 s (typical)
` Bulk Erase (512 Kbit) in 2 s (typical)
` 2.7 V to 3.6 V Single Supply Voltage
` SPI Bus Compatible Serial Interface
` 20 MHz Clock Rate (maximum)
` Deep Power-down Mode 1 mA (typical)
` Electronic Signature
` More than 100,000 Erase/Program Cycles per Sector
` More than 20 Year Data Retention
M25P05
PDF/DataSheet Download
CONN PIN OUTER CONTACT CRIMP TIN
MODULE POWER 50A 600V 3PH BRIDGE
MODULE POWER 50A 400V 3PH BRIDGE
MODULE POWER 50A 1600V 3PH BRDG
MODULE POWER 50A 1200V 3PH BRDG
MODULE POWER 40A 1200V BRIDGE
Price: 0.47-0.94 USD
256K I2C, CMOS Serial EEPROM, SOP8, Low-power CMOS technology, 2-wire serial interface bus
Price: 10-20 USD
LCD Module, -0.3 to 7.0V, LED Backlight / Yellow-green, 8-bit parallel data transfer
Price: 12-13 USD
high accuracy instrumentation amplifier, 25μV, DIP
Price: 1-2 USD
BGA, mobile intel, express chipset, Enhanced Addressing support, IntelRMPM, 1.65 V
Price: 10-59 USD
Mitsubishi igbt module, Low Drive Power, High Frequency Operation, 600V Collector-Emitter Voltage
Price: 0.3-0.5 USD
CAN-transceiver, SOP8, –0.3 to 6.5 V, Excellent EMC performance, Over-temperature protection
Price: 1.2-2.5 USD
512Mb DDR2 SDRAM, BGA, - 1.0 V to 2.3 V, Programmable Additive Latency, On Die Termination
Price: 0.1-0.9 USD
SOT343, MES field EFFECT transistor, 1.1 dB, 0.02 pF, 40 mA
Price: 0.01-100 USD
large capacitance, aluminum electrolytic capacitor, 180 uF, 315 V, Non solvent-proof type
Price: 46-67 USD
QFP144, –0.5 to 1.32 V, Eight global clock lines, abundant routing, Digital Clock Manager, Field-P...
Price: 50-75 USD
IGBT module, 600V, 50A, DIP, 220W, 6MBI50FA-060-01, Fuji Electric
Price: 0.55-0.74 USD
5A, Compound Gate Driver, 8-SOIC, National Semiconductor
