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M59BW10225N1, M59C, M59DR008E

Table of contents:
Info of M59BW10225N1
Info of M59C
Info of M59DR008E

M59BW10225N1, M59C, M59DR008E Selling Leads, Datasheet

MFG:ST Package Cooled:TSSOP D/C:99+(og stok)

M59BW10225N1, M59C, M59DR008E Datasheet download

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Part Number: M59BW10225N1

MFG: ST

Package Cooled: TSSOP

D/C: 99+(og stok)

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M59DR008E General Description

The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.The device supports asynchronous page
mode from all the blocks of the memory array.

The array matrix organization allows each block to be erased and reprogrammed without affecting other blocks. All blocks are protected against programming and erase at Power Up. Blocks can be unprotected to make changes in the application and then reprotected.

Instructions for Read/Reset, Auto Select, Write Configuration Register, Programming, Block Erase, Bank Erase, Erase Suspend, Erase Resume,Block Protect, Block Unprotect, Block Locking,CFI Query, are written to the memory through a Command Interface using standard microprocessor write timings.

The device is offered in TSOP48 (12 x 20 mm) and in FBGA48 0.75 mm ball pitch packages.When shipped all bits of the M59DR008 device are at the logical level '1'.

M59DR008E Maximum Ratings

Symbol	Parameter	Value	Unit
T_A	Ambient Operating Temperature⁽²⁾	-40to85	°C
T_BIAS	Temperature Under Bias	-40to125	°C
T_STG	Storage Temperature	-55to155	°C
V_IO⁽³⁾	Input or Output Voltage	-0.5toV_DDQ+0.5	V
V_DD,V_DDQ	Supply Voltage	-0.5to2.7	V
VPP	Program Voltage	-0.5to13	V

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.

2. Depends on range.

3. Minimum Voltage may undershoot to 2V during transition and for less than 20ns.

M59DR008E Features

`SUPPLY VOLTAGE
    V_DD = V_DDQ = 1.65V to 2.2V: for Program,Erase and Read
    V_PP = 12V: optional Supply Voltage for fast Program and Erase
`ASYNCHRONOUS PAGE MODE READ
    Page Width: 4 words
    Page Access: 35ns
    Random Access: 100ns
` PROGRAMMING TIME
    10s by Word typical
    Double Word Programming Option
` MEMORY BLOCKS
    Dual Bank Memory Array: 4 Mbit - 4 Mbit
    Parameter Blocks (Top or Bottom location)
    Main Blocks
` DUAL BANK OPERATIONS
    Read within one Bank while Program or Erase within the other
    No delay between Read and Write operations
` BLOCK PROTECTION/UNPROTECTION
    All Blocks protected at Power Up
    Any combination of Blocks can be protected
    WP for Block Locking
` COMMON FLASH INTERFACE (CFI)
` 64 bit SECURITY CODE
` ERASE SUSPEND and RESUME MODES
` 100,000 PROGRAM/ERASE CYCLES per BLOCK
` 20 YEARS DATA RETENTION
    Defectivity below 1ppm/year
` ELECTRONIC SIGNATURE
    Manufacturer Code: 20h
    Device Code, M59DR008E: A2h
    Device Code, M59DR008F: A3h

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