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M59DR032A, M59DR032A120ZB6, M59DR032A-120ZB6

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MFG:ST  Package Cooled:BGA  D/C:03+

M59DR032A, M59DR032A120ZB6, M59DR032A-120ZB6 Picture

M59DR032A, M59DR032A120ZB6, M59DR032A-120ZB6 Datasheet download

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Part Number: M59DR032A

 

MFG: ST

Package Cooled: BGA

D/C: 03+

 

 

 
 
 
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  • M59DR032A

  • Vendor: ST Pack: BGA D/C: 02+& Qty: 5000  Adddate: 2024-04-28
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  • TOPIA TECHNOLOGY CO. LTD   China
    Contact: Ms.Mandy   MSN:mandyxi2006@hotmail.com
    Tel: 0086-755-83001125
    Fax: 0086-755-83001175
    (13)

About M59DR032A

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Datasheet: M59DR032A

File Size: 277210 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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M59DR032A120ZB6 Suppliers

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About M59DR032A120ZB6T

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Datasheet: M59DR032A120ZB6T

File Size: 277210 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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  • M59253FP

  • Vendor: MITSUBISHI D/C: 02+& Qty: 44  Adddate: 2024-04-28
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  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)
  • M59255BFP

  • Vendor: Renesas D/C: 05+& Qty: 1421  Adddate: 2024-04-28
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  • XENTRON COMPANY LIMITED   China
    Contact: Ms.LiliWan   MSN:xentron1@hotmail.com
    Tel: 86-755-83041490
    Fax: 86-755-83013736
    (0)

About M59104

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Datasheet: M59104

File Size: 82050 KB

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M59DR032A General Description

The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.The device supports asynchronous page mode from all the blocks of the memory array.

The array matrix organization allows each block to be erased and reprogrammed without affecting other blocks. All blocks are protected against programming and erase at Power Up. Blocks can be unprotected to make changes in the application and then reprotected.

Instructions for Read/Reset, Auto Select, Write Configuration Register, Programming, Block Erase, Bank Erase, Erase Suspend, Erase Resume,Block Protect, Block Unprotect, Block Locking,CFI Query, are written to the memory through
a Command Interface using standard microprocessor
write timings.

The device is offered in TSOP48 (12 x 20 mm) and in FBGA48 0.75 mm ball pitch packages.When shipped all bits of the M59DR032 device are at the logical level '1'.

M59DR032A Maximum Ratings

Symbol
Quantity
Value
Unit
TA
Ambient Operating Temperature (2)
-40to85
°C
TBIAS
Temperature Under Bias
-40to125
°C
TSTG
Storage Temperature

-55to155

°C
VIO(3)
Input or Output Voltage
-0.5toVDDQ+0.5
V
VDD,VDDQ
Supply Voltage
-0.5to2.7
V
VPP
Program Voltage
-0.5to13
V

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.

2. Depends on range.

3. Minimum Voltage may undershoot to 2V during transition and for less than 20ns.

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