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M59DR032A-120ZB6ES, M59DR032A120ZB6T, M59DR032EA

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Info of M59DR032A-120ZB6ES
Info of M59DR032A120ZB6T
Info of M59DR032EA

M59DR032A-120ZB6ES, M59DR032A120ZB6T, M59DR032EA Selling Leads, Datasheet

MFG:ST Package Cooled:99 D/C:IC

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Part Number: M59DR032A-120ZB6ES

MFG: ST

Package Cooled: 99

D/C: IC

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M59DR032EA General Description

The M59DR032E is a 32 Mbit (2Mbit x16) non-vol- atile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 2.2V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up custom- er programming.

The device features an asymmetrical block archi- tecture. M59DR032E has an array of 71 blocks and is divided into two banks, Banks A and B, pro-viding Dual Bank operations. While programming or erasing in Bank A, read operations are possible in Bank B or vice versa. Only one bank at a time is allowed to be in program or erase mode. The bank architecture is summarized in Table 2, and the Block Addresses are shown in Appendix A. The Parameter Blocks are located at the top of the memory address space for the M59DR032EA,and at the bottom for the M59DR032EB.

Each block can be erased separately. Erase can be suspended, in order to perform either read or program in any other block, and then resumed. Each block can be programmed and erased over 100,000 cycles.

Program and Erase commands are written to the Command Interface of the memory. An internal Program/Erase Controller takes care of the tim- ings necessary for program and erase operations.

The end of a program or erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC stan- dards.

The M59DR032E features an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency, enabling in- stant code and data protection. All blocks have two levels of protection. They can be individually locked and locked-down preventing any acciden- tal programming or erasure. All blocks are locked at Power Up and Reset.

The device includes a 128 bit Protection Register and a Security Block to increase the protection of a system's design. The Protection Register is di- vided into two 64 bit segments. The first segment contains a unique device number written by ST, while the second one is one-time-programmable by the user. The user programmable segment can be permanently protected. The Security Block, pa-rameter block 0, can be permanently protected by the user. Figure 4, shows the Security Block and Protection Register Memory Map.

The device is available in TFBGA48 (7 x 12mm and 7 x 7mm, 0.75mm pitch) packages and it is supplied with all the bits erased (set to '1').

M59DR032EA Maximum Ratings

Symbol	Parameter	Value	Unit
T_A	Ambient Operating Temperature ⁽¹⁾	40 to 85	V
T_BIAS	Temperature Under Bias	40 to 125	V
T_STG	Storage Temperature	55 to 155	V
V_IO ⁽²⁾	Input or Output Voltage	0.5 to V_DDQ+0.5
V_DD, V_DDQ	Supply Voltage	0.5 to 2.7
V_PP	Program Voltage	0.5 to 13

Note: 1. Depends on range.
2. Minimum Voltage may undershoot to 2V during transition and for less than 20ns.

M59DR032EA Features

` SUPPLY VOLTAGE
V_DD = V_DDQ= 1.65V to 2.2V for Program,Erase and Read
V_PP = 12V for fast Program (optional)
` ASYNCHRONOUS PAGE MODE READ
Page Width: 4 Words
Page Access: 35ns
Random Access: 85ns, 100ns and 120ns
` PROGRAMMING TIME
10µs by Word typical
Double Word Program Option
` MEMORY BLOCKS
Dual Bank Memory Array: 4 Mbit, 28 Mbit
Parameter Blocks (Top or Bottom location)
` DUAL BANK OPERATIONS
Read within one Bank while Program or Erase within the other
No delay between Read and Write operations
` BLOCK LOCKING
All blocks locked at Power up
Any combination of blocks can be locked
WP for Block Lock-Down
` COMMON FLASH INTERFACE (CFI)
64 bit Unique Device Identifier
64 bit User Programmable OTP Cells
` ERASE SUSPEND and RESUME MODES
` 100,000 PROGRAM/ERASE CYCLES per BLOCK
` 20 YEARS DATA RETENTION
Defectivity below 1ppm/year
` ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Top Device Code, M59DR032EA: 00A0h
Bottom Device Code, M59DR032EB: 00A1h

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