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M59PW064, M59PW064 .100M1., M59PW064100M1

Table of contents:
Info of M59PW064
Info of M59PW064 .100M1.
Info of M59PW064100M1

M59PW064, M59PW064 .100M1., M59PW064100M1 Selling Leads, Datasheet

MFG:ST Package Cooled:SMD44 D/C:03+

M59PW064, M59PW064 .100M1., M59PW064100M1 Picture

M59PW064, M59PW064 .100M1., M59PW064100M1 Datasheet download

Five Points

Part Number: M59PW064

MFG: ST

Package Cooled: SMD44

D/C: 03+

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M59PW064 General Description

The M59PW064 is a 64Mbit (4Mbx16), Mask-ROM pin-out compatible, non-volatile LightFlash memory, that can be read, erased and reprogrammed. Read operations can be performed using a single low voltage (2.7 to 3.6V) supply. Program and Erase operations require an additional VPP (11.4 to 12.6V) power supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

The memory is divided into 32 uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased (see Table 2., Block Addresses). Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller (P/E.C.) simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.

The M59PW064 features an innovative command,Multiple Word Program, that is used to program large streams of data. It greatly reduces the total programming time when a large number of Words are written to the memory at any one time. Using this command the entire memory can be programmed in 8s, compared to 36s using the standard
Word Program.

The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.Chip Enable and Output Enable signals control the
bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic.

The memory is offered in SO44 and TSOP48 (12 x 20mm) packages. The memory is supplied with all the bits set to '1').

M59PW064 Maximum Ratings

Stressing the device above the rating listed in the Absolute Maximum Ratings" table may cause permanent
damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.

Symbol	Quantity	Min.	Max.	Unit
T_BIAS	Temperature Under Bias	-50	125	°C
T_STG	Storage Temperature	-65	150	°C
V_IO	Input or Output Voltage^(1,2)	-0.6	V_CC+0.6	V
V_CC	Read Supply Voltage	-0.6	4	V
V_PP	Program/Erase Supply Voltage ⁽³⁾	-0.6	13.5	V

Note: 1. Minimum voltage may undershoot to 2V for less than 20ns during transitions.
2. Maximum voltage may overshoot to V_CC +2V for less than 20ns during transitions.
3. Maximum voltage may overshoot to 14.0V for less than 20ns during transitions. V_PPmust not remain at V_HHfor more than a total of 80hrs.

M59PW064 Features

` MASK-ROM PIN-OUT COMPATIBLE
` SUPPLY VOLTAGE
    VCC= 2.7 to 3.6V for Read
    VPP = 11.4 to 12.6V for Program
` ACCESS TIME
    90ns at VCC = 3.0 to 3.6V
    100, 110ns at VCC = 2.7 to 3.6V
` PROGRAMMING TIME
    9s per Word typical
    Multiple Word Programming Option(8s typical Chip Program)
`SUITABLE FOR ON-BOARD      PROGRAMMING
`ERASE TIME
    41s typical Chip Erase
` UNIFORM BLOCKS
    32 blocks of 2 Mbits
` PROGRAM/ERASE CONTROLLER
     Embedded Word Program algorithms
`10,000 PROGRAM/ERASE CYCLES per BLOCK
` ELECTRONIC SIGNATURE
    Manufacturer Code: 0020h
    Device Code : 88AAh

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