M63803GP, M63803P, M63806P Selling Leads, Datasheet
MFG:MITSUBIS Package Cooled:MODULE D/C:09+
M63803GP, M63803P, M63806P Datasheet download

Part Number: M63803GP
MFG: MITSUBIS
Package Cooled: MODULE
D/C: 09+
MFG:MITSUBIS Package Cooled:MODULE D/C:09+
M63803GP, M63803P, M63806P Datasheet download

MFG: MITSUBIS
Package Cooled: MODULE
D/C: 09+
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Datasheet: M63803GP
File Size: 53248 KB
Manufacturer: MITSUBISHI
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M63803P
File Size: 57037 KB
Manufacturer: MITSUBISHI
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M63806P
File Size: 127760 KB
Manufacturer: MITSUBISHI
Download : Click here to Download
M63803P, M63803FP, M63803GP and M63803KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
|
Symbol |
Parameter |
Conditions |
Ratings |
Unit | |
| VCEO IC VI Pd Topr Tstg |
Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature |
Output, H Current per circuit output, L |
0.5 ~ +35 300 0.5 ~ +35 1.47 1.00 0.80 0.78 40 ~ +85 55 ~ +125 |
V mA V W °C °C °C | |
| Ta= 25, when mounted on board |
M63803P M63803FP M63803GP M63803KP | ||||

M63803P, M63803FP, M63803GP and M63803KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
|
Symbol |
Parameter |
Conditions |
Ratings |
Unit | |
| VCEO IC VI Pd Topr Tstg |
Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature |
Output, H Current per circuit output, L |
0.5 ~ +35 300 0.5 ~ +35 1.47 1.00 0.80 0.78 40 ~ +85 55 ~ +125 |
V mA V W °C °C °C | |
| Ta= 25, when mounted on board |
M63803P M63803FP M63803GP M63803KP | ||||

M63806P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
|
Symbol |
Parameter |
Conditions |
Ratings |
Unit | |
| VCEO IC VI Pd Topr Tstg |
Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature |
Output, H Current per circuit output, L |
0.5 ~ +35 300 0.5 ~ +35 1.79 1.10 0.68 40 ~ +85 55 ~ +125 |
V mA V W °C °C °C | |
| Ta= 25, when mounted on board |
M63806P M63806FP M63806KP | ||||

