M66252, M66252FP, M66252P Selling Leads, Datasheet
MFG:MITSUBIS Package Cooled:DIP D/C:09+
M66252, M66252FP, M66252P Datasheet download
Part Number: M66252
MFG: MITSUBIS
Package Cooled: DIP
D/C: 09+
M66252, M66252FP, M66252P
- Table of contents:
Info of M66252
Info of M66252FP
Info of M66252P
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About M66252FP
PDF/DataSheet Download
Datasheet: M66252FP
File Size: 149272 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About M66252FP
PDF/DataSheet Download
Datasheet: M66252FP
File Size: 149272 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About M66252P
PDF/DataSheet Download
Datasheet: M66252P
File Size: 149272 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
M66252FP General Description
The M66252P/FP is a high-speed line memory with a FIFO(First In First Out) structure of 1152-word × 8-bit configuration which uses high-performance silicon gate CMOS process technology.
It has separate clock, enable and reset signals for write and read and is most suitable as a buffer memory between
devices with different data processing throughput.
M66252FP Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Rating |
Unit |
| Vcc | Supply voltage |
Reference pin: GND |
-0.5to+7.0 |
V |
| VI | Input voltage |
0.5 toVcc+0.5 |
V | |
| Vo | Output voltage |
0.5 toVcc+0.5 |
V | |
| Pd | Power dissipation | Ta = 25°C |
550(Note 1) |
mW |
| Tstg | Storage temperature |
-65 to +150 |
°C |
Note 1: Ta 62°C are derated at 8.8mW/°C (24P4Y)
Ta 51°C are derated at 7.5mW/°C (24P2W)
M66252FP Features
• Memory construction ........................................................
....................... 1152words x 8bits (dynamic memory)
• High-speed cycle ............................................ 50ns (min.)
• High-speed access ........................................ 40ns (max.)
• Output hold ....................................................... 5ns (min.)
• Fully independent, asynchronous write and read operations
• Variable-length delay bit
• Output .................................................................... 3-state
....................... 1152words x 8bits (dynamic memory)
• High-speed cycle ............................................ 50ns (min.)
• High-speed access ........................................ 40ns (max.)
• Output hold ....................................................... 5ns (min.)
• Fully independent, asynchronous write and read operations
• Variable-length delay bit
• Output .................................................................... 3-state
M66252FP Typical Application
Digital photocopiers, high-speed facsimiles, laser beam printers.
M66252FP Connection Diagram
M66252P General Description
The M66252P/FP is a high-speed line memory with a FIFO(First In First Out) structure of 1152-word × 8-bit configuration which uses high-performance silicon gate CMOS process technology.
It has separate clock, enable and reset signals for write and read and is most suitable as a buffer memory between
devices with different data processing throughput.
M66252P Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Rating |
Unit |
| Vcc | Supply voltage |
Reference pin: GND |
-0.5to+7.0 |
V |
| VI | Input voltage |
0.5 toVcc+0.5 |
V | |
| Vo | Output voltage |
0.5 toVcc+0.5 |
V | |
| Pd | Power dissipation | Ta = 25°C |
550(Note 1) |
mW |
| Tstg | Storage temperature |
-65 to +150 |
°C |
Note 1: Ta 62°C are derated at 8.8mW/°C (24P4Y)
Ta 51°C are derated at 7.5mW/°C (24P2W)
M66252P Features
• Memory construction ........................................................
....................... 1152words x 8bits (dynamic memory)
• High-speed cycle ............................................ 50ns (min.)
• High-speed access ........................................ 40ns (max.)
• Output hold ....................................................... 5ns (min.)
• Fully independent, asynchronous write and read operations
• Variable-length delay bit
• Output .................................................................... 3-state
....................... 1152words x 8bits (dynamic memory)
• High-speed cycle ............................................ 50ns (min.)
• High-speed access ........................................ 40ns (max.)
• Output hold ....................................................... 5ns (min.)
• Fully independent, asynchronous write and read operations
• Variable-length delay bit
• Output .................................................................... 3-state
M66252P Typical Application
Digital photocopiers, high-speed facsimiles, laser beam printers.
M66252P Connection Diagram
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