M66256FP, M66256GP, M66257 Selling Leads, Datasheet
MFG:RENESAS Package Cooled:00+ D/C:SMD
M66256FP, M66256GP, M66257 Datasheet download
Part Number: M66256FP
MFG: RENESAS
Package Cooled: 00+
D/C: SMD
MFG:RENESAS Package Cooled:00+ D/C:SMD
M66256FP, M66256GP, M66257 Datasheet download
MFG: RENESAS
Package Cooled: 00+
D/C: SMD
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: M66256FP
File Size: 151930 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M660
File Size: 60756 KB
Manufacturer: ICST [Integrated Circuit Systems]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M66257
File Size: 125072 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
The M66256FP is a high-speed line memory with a FIFO(First In First Out) structure of 5120-word ×8-bit configuration
which uses high-performance silicon gate CMOS process technology.
It has separate clock, enable and reset signals for write and read, and is most suitable as a buffer memory between devices with different data processing throughput.
Symbol |
Parameter |
Conditions |
Rating |
Unit |
Vcc | Supply voltage |
A value based on GND pin |
-0.5to+7.0 |
V |
VI | Input voltage |
0.5 toVcc+0.5 |
V | |
Vo | Output voltage |
0.5 toVcc+0.5 |
V | |
Pd | Maximum power dissipation | Ta = 25°C |
440 |
mW |
Tstg | Storage temperature |
-65 to +150 |
°C |
• Memory configuration ........................................................
............................. 5120 words× 8-bits (dynamic memory)
• High-speed cycle ............................................. 25ns (Min.)
• High-speed access ......................................... 18ns (Max.)
• Output hold ........................................................ 3ns (Min.)
• Fully independent, asynchronous write and read operations
• Variable length delay bit
• Output .................................................................... 3 states