M66272FP280, M66280FPDBOT, M66281FP Selling Leads, Datasheet
MFG:MITS Package Cooled:QFP D/C:00+
M66272FP280, M66280FPDBOT, M66281FP Datasheet download
Part Number: M66272FP280
MFG: MITS
Package Cooled: QFP
D/C: 00+
MFG:MITS Package Cooled:QFP D/C:00+
M66272FP280, M66280FPDBOT, M66281FP Datasheet download
MFG: MITS
Package Cooled: QFP
D/C: 00+
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PDF/DataSheet Download
Datasheet: M660
File Size: 60756 KB
Manufacturer: ICST [Integrated Circuit Systems]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M660
File Size: 60756 KB
Manufacturer: ICST [Integrated Circuit Systems]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M66281FP
File Size: 128836 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
The M66281FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO (First In First Out) structure consisting of 5120 words x 8 bits x 2.
Since memory is available to simultaneously output 1 line delay and 2 line delay data, the M66281FP is optimal for the compensation of data of multiple lines.
Symbol |
Parameter |
Conditions |
Rating |
Unit |
Vcc | Supply voltage |
Value based on the GND pin |
-0.3to+4.6 |
V |
VI | Input voltage |
0.3 toVcc+0.3 |
V | |
Vo | Output voltage |
0.3 toVcc+0.3 |
V | |
Pd | Power dissipation | Note |
540 |
mW |
Tstg | Storage temperature |
-55 to +150 |
°C |