M66282FP, M66283FP, M66286FP Selling Leads, Datasheet
MFG:MIT Package Cooled:SSOP D/C:99+
M66282FP, M66283FP, M66286FP Datasheet download
Part Number: M66282FP
MFG: MIT
Package Cooled: SSOP
D/C: 99+
MFG:MIT Package Cooled:SSOP D/C:99+
M66282FP, M66283FP, M66286FP Datasheet download
MFG: MIT
Package Cooled: SSOP
D/C: 99+
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PDF/DataSheet Download
Datasheet: M66282FP
File Size: 85398 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M660
File Size: 60756 KB
Manufacturer: ICST [Integrated Circuit Systems]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: M660
File Size: 60756 KB
Manufacturer: ICST [Integrated Circuit Systems]
Download : Click here to Download
The M66282FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO (First In First Out) structure consisting of 8192 words x 8 bits.
The M66282FP, performing reading and writing operations at different cycles independently and asynchronously, is optimal for buffer memory to be used between equipment of different data processing speeds.
Symbol |
Parameter |
Conditions |
Ratings |
Unit |
Vcc | Supply voltage |
Value based on the GND pin |
-0.3to+4.6 |
V |
VI | Input voltage |
-0.3toVcc+0.3 |
V | |
Vo | Output voltage |
-0.3toVcc+0.3 |
V | |
Pd | Power dissipation |
300 |
mW | |
Tstg | Storage temperature |
-55 to +150 |
°C |