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The MGFC39V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.
MGFC39V6472A Maximum Ratings
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-15
V
VGSO
Gate to source voltage
-15
V
ID
Drain current
7.5
A
IGR
Reverse gate current
-20
mA
IGF
Forward gate current
42
mA
PT
Total power dissipation *1
42.8
W
Tch
Channel temperature
175
deg.C
Tstg
Storage temperature
-65/+175
deg.C
MGFC39V6472A Features
Class A operation Internally matched to 50(ohm) system High output power P1dB = 8W (TYP.) @ f=6.4~7.2GHz High power gain GLP = 9 dB (TYP.) @ f=6.4~7.2GHz High power added efficiency P.A.E. = 28 % (TYP.) @ f=6.4~7.2GHz Low distortion [ item -51 ] IM3= -45 dBc(TYP.) @Po=28dBm S.C.L.
MGFC39V6472A Typical Application
item 01 : 6.4~7.2 GHz band power amplifier item 51 : 6.4~7.2 GHz band digital radio communication