MGF0909A Selling Leads, Price trend, MGF0909A DataSheet download, circuit diagram from SeekIC.com

Features: • High output power P1dB=38dBm(TYP.) @f=2.3GHz• High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm• High power added efficiency hadd=45%(TYP.) @f=2.3GHz,P1dB=20dBmApplication·For UHF Band power amplifiersSpecifications Parameter Symbol Ratings Unit Gate...

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SeekIC No. : 004419805 Detail

MGF0909A: Features: • High output power P1dB=38dBm(TYP.) @f=2.3GHz• High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm• High power added efficiency hadd=45%(TYP.) @f=2.3GHz,P1dB=20dBmApplica...

MGF0909A Data Sheet

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Part Number:: MGF0909A
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/25

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Description

Features:

• High output power P1dB=38dBm(TYP.) @f=2.3GHz
• High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm
• High power added efficiency hadd=45%(TYP.) @f=2.3GHz,P1dB=20dBm

Application

·For UHF Band power amplifiers

Specifications

Parameter	Symbol	Ratings	Unit
Gate to drain voltage	V_GDO	-15	V
Gate to source voltage	V_GSO	-15	V
Drain current	I_D	5.0	A
Reverse gate current	I_GR	15	mA
Forward gate current	I_GF	31.5	mA
Total power dissipation *1	P_T	27.3	W
Channel temperature	T_ch	175	°C
Storage temperature	T_stg	65 /+175	°C

Description

The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.

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MGF0909A

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