MGF0909A

Features: • High output power P1dB=38dBm(TYP.) @f=2.3GHz• High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm• High power added efficiency hadd=45%(TYP.) @f=2.3GHz,P1dB=20dBmApplication·For UHF Band power amplifiersSpecifications Parameter Symbol Ratings Unit Gate...

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SeekIC No. : 004419805 Detail

MGF0909A: Features: • High output power P1dB=38dBm(TYP.) @f=2.3GHz• High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm• High power added efficiency hadd=45%(TYP.) @f=2.3GHz,P1dB=20dBmApplica...

floor Price/Ceiling Price

Part Number:
MGF0909A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/20

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Product Details

Description



Features:

• High output power P1dB=38dBm(TYP.) @f=2.3GHz
• High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm
• High power added efficiency hadd=45%(TYP.) @f=2.3GHz,P1dB=20dBm





Application

·For UHF Band power amplifiers




Specifications

Parameter
Symbol
Ratings
Unit
Gate to drain voltage
VGDO
-15
V
Gate to source voltage
VGSO
-15
V
Drain current
ID
5.0
A
Reverse gate current
IGR
15
mA
Forward gate current
IGF
31.5
mA
Total power dissipation *1
PT
27.3
W
Channel temperature
Tch
175
°C
Storage temperature
Tstg
65 /+175
°C





Description

The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.




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